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Name: IPL60R075CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL60R075CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPL60R075CFD7AUMA1

Part No.:: IPL60R075CFD7AUMA1

Manufacturer:: Infineon Technologies

Package:: PG-VSON-4

Datasheet:: IPL60R075CFD7AUMA1.pdf

Description:: MOSFET N-CH 650V 33A 4VSON

In Stock:: 2268

Quantity:: Add To Cart

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IPL60R075CFD7AUMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
CoolMOS™ CFD7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
75mOhm @ 15.1A, 10V
Vgs(th)(Max)@Id:
4.5V @ 760µA
GateCharge(Qg)(Max)@Vgs:
67 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2721 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
189W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Surface Mount

IPL60R075CFD7AUMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPL60R075CFD7AUMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPL60R075CFD7AUMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPL60R075CFD7AUMA1 information

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IPL60R075CFD7AUMA1 Typical application Circuitry

The IPL60R075CFD7AUMA1 is a key component from the innovative CoolMOS™ FD7 series, known for its exceptional energy conservation, reduced power wastage, and enhanced resilience, positioning it as a preferred component for contemporary applications requiring efficient power conversion. This MOSFET, recognized for its rapid switching and low resistance characteristics, is integral in settings that prioritize energy thriftiness and condensed power footprint. This discussion delves into the nuances of incorporating the IPL60R075CFD7AUMA1 into a circuit, emphasizing meticulous connection techniques for peak functionality.

1. Blueprint for Circuit Assimilation:

- Drain (D): This terminal, a conduit for the current directed to the load, mandates an unobstructed linkage with the load's terminal. The alternate terminal of the load is then interfaced with either the power supply's elevated voltage (characteristic of top-side switching tactics) or the ground (prevalent in bottom-side switching approaches).

- Gate (G): Commanding the IPL60R075CFD7AUMA1's transmissive status, this junction extends a connection from the dispatch point of the control circuit. It frequently encompasses a safeguarding resistor in tandem to shape the switching trajectory and provide a buffer against potential adversities. A gate resistor, tactically embedded between the commanding unit and the gate, governs the inrush during state shifts and averts resonant dispositions.

- Source (S): Customarily tethered to the earth in simplified switching schemas, this terminal, within the ambit of top-side switching, affiliates directly with the load mechanism.

2. Entrenching Protective Mechanisms:

- Bypass Diode: In the landscape of inductive payloads, the IPL60R075CFD7AUMA1 calls for a supplementary diode, aligned in parallelism with the load. This architecture constitutes a defense against voltage escalations succeeding inductive recoils, conserving the MOSFET's structural soundness.

- Gate Fortifications: A protective ensemble, enlisting a zener diode between the gate and source, repels voltage intensifications, whereas a resistor nested in the gate's conduit moderates current amplitude, reinforcing the IPL60R075CFD7AUMA1 against electrostatic inconsistencies.

3. Heat Oversight Protocols: The IPL60R075CFD7AUMA1's vulnerability to thermal accumulation, particularly during intense current episodes, accentuates the imperative for adept heat diffusion strategies, attuned to the delineated thermal resistance stipulations.

4. Refining Gate Drive Parameters: The IPL60R075CFD7AUMA1 enjoins a precise gate voltage plateau for faultless activity, often summoning an auxiliary driver circuitry or level intermediary, particularly when operational cues emanate from diminished voltage control matrices.

5. Compliance with Specified Directives: Upholding the IPL60R075CFD7AUMA1's demarcated operational thresholds is critical, certifying that neither voltage nor current indices infringe the endorsed peripheries, thereby dodging predicaments like surge current incidents.

6. Rigorous Functional Scrutiny: Subsequent to the circuit's composition, a methodical appraisal under restrained power parameters is indispensable prior to sanctioning the circuit for maximal operational exertion.

In manipulating the IPL60R075CFD7AUMA1, strict adherence to electrostatic discharge standards is compulsory, averting unintentional impairment. The instatement of this MOSFET within an electronic assembly should be executed with precision, referencing its datasheet for the subtleties and specifications germane to the IPL60R075CFD7AUMA1.

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6. What is the process for return or replacement of IPL60R075CFD7AUMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPL60R075CFD7AUMA1 we delivered, we will accept the replacement or return of the IPL60R075CFD7AUMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPL60R075CFD7AUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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