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Name: IPL60R065C7AUMA1
Brand: Infineon Technologies
SKU: IPL60R065C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPL60R065C7AUMA1

Part No.:: IPL60R065C7AUMA1

Manufacturer:: Infineon Technologies

Package:: PG-VSON-4-1

Datasheet:: IPL60R065C7AUMA1.pdf

Description:: MOSFET HIGH POWER_NEW

In Stock:: 3231

Quantity:: Add To Cart

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IPL60R065C7AUMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
CoolMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
65mOhm @ 15.9A, 10V
Vgs(th)(Max)@Id:
4V @ 800µA
GateCharge(Qg)(Max)@Vgs:
68 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2850 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
180W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Surface Mount

IPL60R065C7AUMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPL60R065C7AUMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPL60R065C7AUMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPL60R065C7AUMA1 information

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IPL60R065C7AUMA1 Typical application Circuitry

The IPL60R065C7AUMA1, belonging to the advanced CoolMOS™ C7 series, stands out with its remarkable energy-saving features, minimal power loss, and superior robustness, making it an ideal choice for modern high-efficiency power conversion applications. This particular MOSFET, characterized by its fast-switching behavior and low on-resistance, is crucial in scenarios demanding energy efficiency and power density. Herein, we explore the intricate details of interfacing the IPL60R065C7AUMA1 within a circuit, ensuring precision in connection strategies for optimal performance.

1. Methodology for Accurate Circuit Integration:

- Drain (D): The Drain terminal, central to the flow path of the current to the load, requires direct coupling with one end of the load itself. The complementary end of the load then attaches to either the power supply's positive aspect (typical of high-side switching mechanisms) or to the ground (in scenarios utilizing low-side switching).

- Gate (G): This control-centric terminal orchestrates the IPL60R065C7AUMA1's conductive state. The connectivity extends from the control circuit's delivery point, often incorporating a protective resistor in series to modulate the switching profile and shield against potential threats. A gate resistor, strategically positioned between the control unit and the gate, manages the current surge during transitions and deters oscillatory tendencies.

- Source (S): Conventionally anchored to the ground in streamlined switching arrangements, the Source terminal, in the context of high-side switching, associates directly with the load entity.

2. Integration of Defensive Apparatus:

- Recirculation Diode: When dealing with inductive loads, the IPL60R065C7AUMA1 necessitates an ancillary diode, positioned parallel to the load. This setup forms a bulwark against voltage spikes following inductive discharges, thereby preserving the MOSFET's integrity.

- Gate Safeguards: A protective schema, involving a zener diode between the gate and source, defends against voltage surges, while a resistor inserted in the gate pathway curtails excessive current, fortifying the IPL60R065C7AUMA1 against electrostatic anomalies.

3. Thermal Management Considerations: The propensity for the IPL60R065C7AUMA1 to accrue heat, especially under substantial current conditions, underscores the necessity for proficient heat dissipation techniques, conforming to prescribed thermal resistance guidelines.

4. Gate Drive Optimization: The IPL60R065C7AUMA1 mandates a specific gate voltage threshold for seamless operation, often necessitating an intermediary driver circuit or level translator, especially when operational parameters originate from low-voltage control systems.

5. Adherence to Operational Protocols: Observance of the IPL60R065C7AUMA1's specified operational limits is paramount, ensuring that voltage and current parameters do not trespass the sanctioned boundaries, thus evading complications like inrush current scenarios.

6. Comprehensive Operational Audit: Upon the circuit's assembly, conducting a systematic examination under conservative power constraints is crucial before the circuit is greenlit for maximum operational workload.

In handling the IPL60R065C7AUMA1, adherence to electrostatic discharge protocols is obligatory, preventing inadvertent damage. The deployment of this MOSFET within any electronic framework should be executed with meticulous reference to its datasheet, capturing the nuances and specifications pertinent to the IPL60R065C7AUMA1, and professional consultation is advised for sophisticated deployments.

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6. What is the process for return or replacement of IPL60R065C7AUMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPL60R065C7AUMA1 we delivered, we will accept the replacement or return of the IPL60R065C7AUMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPL60R065C7AUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations