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Name: IPD90N04S4L04ATMA1
Brand: Infineon Technologies
SKU: IPD90N04S4L04ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPD90N04S4L04ATMA1

Part No.:: IPD90N04S4L04ATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO252-3-313

Datasheet:: IPD90N04S4L04ATMA1.pdf

Description:: MOSFET N-CH 40V 90A TO252-3

In Stock:: 3917

Quantity:: Add To Cart

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IPD90N04S4L04ATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
Automotive, AEC-Q101, OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
40 V
Current-ContinuousDrain(Id)@25°C:
90A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
3.8mOhm @ 90A, 10V
Vgs(th)(Max)@Id:
2.2V @ 35µA
GateCharge(Qg)(Max)@Vgs:
60 nC @ 10 V
Vgs(Max):
+20V, -16V
InputCapacitance(Ciss)(Max)@Vds:
4690 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
71W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IPD90N04S4L04ATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPD90N04S4L04ATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPD90N04S4L04ATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPD90N04S4L04ATMA1 information

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IPD90N04S4L04ATMA1 Typical application Circuitry

IPD90N04S4L04ATMA1

The IPD90N04S4L04ATMA1 is a high-performance power MOSFET developed by Infineon Technologies, designed for efficient power conversion in various applications. This chip is part of the OptiMOS™ 4 40V series, known for its low on-resistance (R_DS(on)) and fast switching capabilities, making it ideal for applications requiring efficient power management.

Versatile Applications: The IPD90N04S4L04ATMA1 is commonly utilized in DC-DC converters, motor control circuits, and power management systems for automotive and industrial applications. Its excellent thermal performance and efficiency make it suitable for compact designs where space and power density are critical.

Key Features: The distinctive attributes of the IPD90N04S4L04ATMA1 include:

- Drain-source voltage (V_DS) of 40V, suitable for low to medium voltage applications.

- Continuous drain current (I_D) of 90A, capable of handling high current loads.

- On-resistance (R_DS(on)) of only 4mΩ, minimizing power losses during operation.

- Low gate charge (Q_g) and fast switching speed, enhancing overall efficiency.

Circuit Design for a Synchronous Buck Converter:

1. Input Capacitor Connection: Use a capacitor (C_in) between the input voltage source (V_in) and ground, with a 47μF capacitor rated for at least 50V to filter input voltage ripples for a 12V input.

2. High-Side MOSFET Integration: Connect the drain of the IPD90N04S4L04ATMA1 to V_in as the high-side switch. The source is connected to the switching node and the inductor (L).

3. Low-Side MOSFET Setup: Employ another IPD90N04S4L04ATMA1 as the low-side switch, connecting its drain to the switching node and its source to ground.

4. Inductor and Output Capacitor Placement: Position an inductor (L) between the switching node and the output capacitor (C_out). A 10μH inductor is recommended for a 20A output current. Connect a 100μF capacitor rated for at least 25V between the output voltage (V_out) and ground to stabilize the output.

5. Gate Drive Circuitry Implementation: Utilize separate gate drivers for the high-side and low-side MOSFETs. Include resistors (R_g) in series with the gates to modulate the switching speed, typically around 5Ω.

Design Considerations:

- Thermal Management: Prioritize cooling solutions for the MOSFETs to prevent overheating and ensure optimal performance.

- Dead Time Control: Properly configure the dead time between the high-side and low-side switches to prevent shoot-through and enhance efficiency.

- Gate Drive Voltage: Ensure that the gate drive voltage is within the specified range to optimize the switching performance of the MOSFETs.

- Parasitic Inductance Minimization: Reduce parasitic inductance in the layout to decrease voltage spikes and improve switching performance.

By meticulously selecting components and adhering to the design guidelines, the IPD90N04S4L04ATMA1 can be effectively employed in a synchronous buck converter circuit for efficient and reliable power conversion in various applications.

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6. What is the process for return or replacement of IPD90N04S4L04ATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPD90N04S4L04ATMA1 we delivered, we will accept the replacement or return of the IPD90N04S4L04ATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPD90N04S4L04ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations