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Name: IPD60R600P6ATMA1
Brand: Infineon Technologies
SKU: IPD60R600P6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPD60R600P6ATMA1

Part No.:: IPD60R600P6ATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO252-3

Datasheet:: IPD60R600P6ATMA1.pdf

Description:: MOSFET N-CH 600V 7.3A TO252-3

In Stock:: 2078

Quantity:: Add To Cart

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IPD60R600P6ATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
CoolMOS™ P6
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
7.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
600mOhm @ 2.4A, 10V
Vgs(th)(Max)@Id:
4.5V @ 200µA
GateCharge(Qg)(Max)@Vgs:
12 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
557 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
63W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IPD60R600P6ATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPD60R600P6ATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPD60R600P6ATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPD60R600P6ATMA1 information

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IPD60R600P6ATMA1 Typical application Circuitry

The IPD60R600P6ATMA1 is a high-performance power MOSFET from the CoolMOS™ P6 series, renowned for its energy efficiency, low power dissipation, and robustness in various switching applications. As a critical component in power conversion and management, understanding the specific connections for the IPD60R600P6ATMA1 is pivotal. This guidance aims to illuminate the precise methodology for integrating this specific MOSFET into an electronic circuit, emphasizing safety, efficiency, and proper functionality.

1. Circuit Integration Methodology:

- 'Drain' (D): Serving as the primary pathway for current heading toward the load, the 'Drain' terminal demands a connection directly to the load's one extremity. The remaining part of the load links either to the positive side of the supply voltage (in high-side switching applications) or ground (in low-side switches).

- 'Gate' (G): Functioning as the MOSFET's command center, the 'Gate' terminal regulates the device's operational status. This terminal connects to your control circuit's output, possibly incorporating a series resistor for safeguarding and modulation of switching dynamics. Employing a gate resistor (Rg) between the gate and the control signal's origin may prevent oscillatory behavior and restrict gate current during switching.

- 'Source' (S): In numerous configurations, especially the straightforward switching designs, the 'Source' terminal finds its connection to the ground. Conversely, in high-side switching schemes, it attaches directly to the load.

2. Incorporating Protective Components:

- Flyback Diode: The IPD60R600P6ATMA1 necessitates a diode in parallel with the inductive load, shielding the MOSFET against potentially destructive voltage spikes following inductive kickbacks.

- Gate Security Measures: Integrating a zener diode between the gate and source establishes a protective barrier against excessive voltages. Implementing a current-limiting resistor within the gate terminal is also prudent.

3. Thermal Regulation: Should the IPD60R600P6ATMA1 handle substantial current, it becomes susceptible to increased temperatures. Appropriate heat dissipation methods, compliant with the specified thermal resistance parameters, are non-negotiable.

4. Gate Drive Considerations: Achieving optimal gate voltage is paramount for the IPD60R600P6ATMA1 to function flawlessly. Often, this necessitates a dedicated driver circuit or level shifter, particularly when interfacing with low-voltage control logic.

5. Compliance with Specifications: Vigilance in adhering to the IPD60R600P6ATMA1's stipulated maximum ratings prevents inadvertent breaches of voltage and current thresholds, safeguarding against transient phenomena like inrush currents.

6. Diagnostic Evaluation: Post-integration, conducting thorough checks under minimal power conditions ensures the circuit's integrity before subjecting it to full operational loads.

The precision in handling the IPD60R600P6ATMA1, given its sensitivity to electrostatic discharge, cannot be understated. Proper procedural adherence guarantees the MOSFET's longevity and reliable performance within its electronic milieu. Always cross-reference the specific datasheet of the IPD60R600P6ATMA1 for nuanced details and seek professional insights for intricate circuit designs.

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6. What is the process for return or replacement of IPD60R600P6ATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPD60R600P6ATMA1 we delivered, we will accept the replacement or return of the IPD60R600P6ATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPD60R600P6ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations