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Name: IPD60R180P7SAUMA1
Brand: Infineon Technologies
SKU: IPD60R180P7SAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPD60R180P7SAUMA1

Part No.:: IPD60R180P7SAUMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO252-3

Datasheet:: IPD60R180P7SAUMA1.pdf

Description:: MOSFET N-CH 600V 18A TO252-3

In Stock:: 7153

Quantity:: Add To Cart

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IPD60R180P7SAUMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
CoolMOS™ P7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
180mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id:
4V @ 280µA
GateCharge(Qg)(Max)@Vgs:
25 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1081 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
72W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Surface Mount

IPD60R180P7SAUMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPD60R180P7SAUMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPD60R180P7SAUMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPD60R180P7SAUMA1 information

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IPD60R180P7SAUMA1 Typical application Circuitry

The IPD60R180P7SAUMA1, belonging to the realm of high-efficiency power MOSFETs, marks its prominence through robust energy-saving features and operational resilience. This segment offers an insightful exposition into the key hallmarks of its series and provides an elaborate circuit connection guide, highlighting the specific functions of each pin in the IPD60R180P7SAUMA1.

1. Gate (G): The Gate, the command interface of the IPD60R180P7SAUMA1, mandates a connection that is in direct correspondence with the output terminus of a suitable driver or controller unit. The presence of a gate resistor in this circuit is fundamental to modulating the inflow currents, thus ensuring seamless operational transitions and shielding the IPD60R180P7SAUMA1 from potentially harmful current surges.

2. Drain (D): Tasked with the pivotal role of current redirection, the Drain asserts the necessity of a steadfast attachment to the positive polarity of the intended load. It is incumbent upon the designer to affirm that the operational demands imposed on the IPD60R180P7SAUMA1 are congruent with its prescribed performance thresholds, sustaining the MOSFET's operational longevity.

3. Source (S): Functioning as the grounding reference, the Source implores a secure linkage to the circuit's established common ground. The potency of this connection predicates the operational coherence and stability of the IPD60R180P7SAUMA1 within its circuit framework.

4. Enhancing Circuit Stability and Longevity:

- The integration of a pull-down resistor within the Gate's network is instrumental in preserving the IPD60R180P7SAUMA1 in a non-activated state during periods of signal absence, reinforcing systemic reliability.

- When engaging with inductive loads, voltage transients can pose a considerable threat to the IPD60R180P7SAUMA1's operational health. The strategic deployment of suppressive components, such as flyback diodes, becomes essential in mitigating potential voltage spikes.

- While the IPD60R180P7SAUMA1 is engineered for optimal thermal conductance, the adoption of additional thermal management strategies, including heat dissipation systems or forced air cooling, is prudent to maintain operational norms under varying load conditions.

In essence, while the narrative above elucidates a comprehensive understanding, it is imperative for practitioners to delve into the IPD60R180P7SAUMA1 datasheet for an exhaustive comprehension of its technical subtleties. Such meticulous scrutiny is indispensable for those aspiring to exploit the full spectrum of the MOSFET's capabilities across diverse operational matrices.

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6. What is the process for return or replacement of IPD60R180P7SAUMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPD60R180P7SAUMA1 we delivered, we will accept the replacement or return of the IPD60R180P7SAUMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPD60R180P7SAUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations