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Name: IPB65R110CFDAATMA1
Brand: Infineon Technologies
SKU: IPB65R110CFDAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPB65R110CFDAATMA1

Part No.:: IPB65R110CFDAATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO263-3

Datasheet:: IPB65R110CFDAATMA1.pdf

Description:: MOSFET N-CH 650V 31.2A D2PAK

In Stock:: 3276

Quantity:: Add To Cart

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IPB65R110CFDAATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPB65R110CFDAATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPB65R110CFDAATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPB65R110CFDAATMA1 Typical application Circuitry

IPB65R110CFDAATMA1

The IPB65R110CFDAATMA1 is a standout component within the CoolMOS™ CFDA series, embodying the latest advancements in power MOSFET technology. This device is tailored for high-efficiency power conversion applications, making it an excellent choice for switch-mode power supplies (SMPS), charging infrastructure, and energy storage systems. Its design is focused on delivering low on-resistance, fast switching capabilities, and exceptional energy efficiency, which are crucial for modern power electronic systems demanding optimal performance and reliability.

1. Voltage Operation Range and Circuit Connection Strategy: The IPB65R110CFDAATMA1 is engineered to operate within a specific voltage range, showcasing its adaptability to a variety of power electronic designs. The device's integration into circuits is facilitated by its compatibility with different power supply voltages, underscoring the importance of selecting the correct voltage parameters to leverage the full potential of the IPB65R110CFDAATMA1 in enhancing power system efficiency and reliability.

2. Detailed Pin Layout for Precision Integration: Featuring a meticulously organized pin configuration, the IPB65R110CFDAATMA1 is designed for easy integration into sophisticated electronic systems. It includes designated terminals for the drain, source, and gate, essential for the MOSFET's function within a circuit. The careful assignment of roles to each pin is instrumental in harnessing the device's capabilities for effective power conversion and management, enabling its seamless incorporation into complex designs while maintaining system performance.

3. Thermal Management Techniques for Stable Operation: To ensure consistent performance across various operational conditions, the IPB65R110CFDAATMA1 employs advanced thermal management strategies. Implementing efficient heat dissipation methods is crucial for maintaining the device's performance integrity and reliability, particularly in applications where precision and durability are of paramount importance.

4. Integration Approaches for Enhanced Device Performance: The successful integration of the IPB65R110CFDAATMA1 into electronic systems demands a holistic strategy that considers the device's electrical and thermal characteristics. This strategy includes precise circuit layout planning to mitigate external noise and interference, crucial for maintaining efficiency and signal integrity. Additionally, optimizing the device's placement within the system is key to maximizing thermal dissipation and electrical efficiency, ensuring that the IPB65R110CFDAATMA1 operates within its optimal performance parameters.

5. Signal Transmission and Power Supply Optimization: Achieving the highest efficiency with the IPB65R110CFDAATMA1 necessitates focused attention on optimizing signal transmission paths and ensuring power supply stability. Establishing direct, low-impedance routes for signal transmission is critical to reducing latency and preventing signal degradation. Moreover, a stable power supply is essential for the reliable operation of the device, requiring the deployment of decoupling capacitors and other power management strategies to provide a clean, stable power source.

In conclusion, the IPB65R110CFDAATMA1 represents a significant advancement in MOSFET technology within the CoolMOS™ CFDA series, designed for applications that require high efficiency, fast switching, and power density in power management. Through its operational flexibility, precisely designed pin configuration, innovative thermal management practices, and a focus on minimizing external interference while ensuring power supply stability, the IPB65R110CFDAATMA1 emerges as a crucial component in the development of systems that demand robust and efficient power conversion solutions.

IPB65R110CFDAATMA1 information

IPB65R110CFDAATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, CoolMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
31.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
110mOhm @ 12.7A, 10V
Vgs(th)(Max)@Id:
4.5V @ 1.3mA
GateCharge(Qg)(Max)@Vgs:
118 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
3240 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
277.8W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of IPB65R110CFDAATMA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB65R110CFDAATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations