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Name: IPB200N25N3GATMA1
Brand: Infineon Technologies
SKU: IPB200N25N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPB200N25N3GATMA1

Part No.:: IPB200N25N3GATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO263-3

Datasheet:: IPB200N25N3GATMA1.pdf

Description:: MOSFET N-CH 250V 64A D2PAK

In Stock:: 722

Quantity:: Add To Cart

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IPB200N25N3GATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
250 V
Current-ContinuousDrain(Id)@25°C:
64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
20mOhm @ 64A, 10V
Vgs(th)(Max)@Id:
4V @ 270µA
GateCharge(Qg)(Max)@Vgs:
86 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
7100 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IPB200N25N3GATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPB200N25N3GATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPB200N25N3GATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPB200N25N3GATMA1 information

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IPB200N25N3GATMA1 Typical application Circuitry

Residing in the echelons of high-performance power MOSFETs, the IPB200N25N3GATMA1 is a testament to advanced engineering, crafted to curtail power wastage and bolster efficiency. This series garners acclaim for its stellar low-on resistance coupled with exceptional thermal properties, positioning it as the cornerstone of applications that mandate minimal energy dissipation and formidable switching proficiencies.

1. Gate (G): The linchpin of control for the MOSFET, the Gate, requires a connection to the driving signal, typically emanating from a pulse-width modulation (PWM) controller or similar device. Introduce a gate resistor within this circuitry to modulate the inrush currents, safeguarding the IPB200N25N3GATMA1 against potential oscillatory behavior.

2. Drain (D): As the conduit for the primary current, the Drain demands a direct connection to the high side of the load. It is paramount, considering the IPB200N25N3GATMA1's formidable current-sustaining capability, to meticulously ascertain that the load parameters do not breach the MOSFET's prescribed operational thresholds.

3. Source (S): The Source functions as the ground reference and must establish a firm connection to the system's common ground or lowest potential point. This connection is instrumental in orchestrating the flawless operation of the IPB200N25N3GATMA1.

4. Enhanced Integration Strategies:

- Instituting a pull-down resistor on the gate ensures the quiescent state of the IPB200N25N3GATMA1, fortifying the system against sporadic fluctuations that could inadvertently energize the MOSFET.

- Operational scenarios that see the IPB200N25N3GATMA1 regulating inductive loads necessitate the adoption of protective measures, such as a snubber circuit or flyback diode, to mitigate the risks posed by potential voltage transients.

5. Navigating Thermal Dynamics: Albeit its optimized operational efficiency, the IPB200N25N3GATMA1 may succumb to substantial thermal flux during peak operational periods. Implementing proactive thermal regulation solutions, like heat sinks or thermally conducive chassis designs, is quintessential for preserving the operational integrity of the MOSFET.

Conclusively, while this exposition provides a fundamental scaffold, it is quintessential to refer to the IPB200N25N3GATMA1's datasheet for an exhaustive compendium of its specifications and operational guidelines. This document remains the beacon for leveraging the MOSFET's capabilities to their zenith, ensuring a harmonious blend of performance, efficiency, and longevity.

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6. What is the process for return or replacement of IPB200N25N3GATMA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB200N25N3GATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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