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Name: IPB072N15N3GATMA1
Brand: Infineon Technologies
SKU: IPB072N15N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPB072N15N3GATMA1

Part No.:: IPB072N15N3GATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TO263-3-2

Datasheet:: IPB072N15N3GATMA1.pdf

Description:: MOSFET N-CH 150V 100A TO263-3

In Stock:: 7069

Quantity:: Add To Cart

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IPB072N15N3GATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
8V, 10V
RdsOn(Max)@IdVgs:
7.2mOhm @ 100A, 10V
Vgs(th)(Max)@Id:
4V @ 270µA
GateCharge(Qg)(Max)@Vgs:
93 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5470 pF @ 75 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IPB072N15N3GATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPB072N15N3GATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPB072N15N3GATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPB072N15N3GATMA1 information

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IPB072N15N3GATMA1 Typical application Circuitry

Renowned for robustness, the IPB072N15N3GATMA1 series manifests attributes of high conductivity and low switch-on resistance, which is integral to energy-efficient operations. These MOSFETs are tailored for applications demanding high-speed performance and reliability, ensuring an impeccable response in varying conditions.

1. Blueprint for Accurate Circuit Integration:

- Gate (G): The epicenter of control for the IPB072N15N3GATMA1, the Gate terminal, mandates a careful connection to the control input source. Introducing a gate resistor in series is prudent for current moderation, safeguarding against potential surges that could compromise the MOSFET's integrity.

- Drain (D): The Drain, responsible for ushering the current through the IPB072N15N3GATMA1, requires a direct link to the consuming entity of the circuit, be it a transducer, motor, or any load indicative of your application's framework.

- Source (S): Culminating the trio of terminals, the Source of the IPB072N15N3GATMA1 should find its anchor at the circuit's common ground or zero potential point, facilitating a complete pathway for the current.

2. Tactical Protocols for Enhanced Operation:

- Integrating a pull-down resistor within the Gate's circuitry ensures the quiescent state of the IPB072N15N3GATMA1 in the absence of a deliberate activation signal, an essential step towards avoiding unintentional activations.

- The vigorous nature of IPB072N15N3GATMA1's operation could invite voltage spikes, particularly with inductive loads. Countermeasures involve configuring a flyback diode parallel to the load, providing a bypass for the induced current and protecting the MOSFET.

3. Navigating Thermal Dynamics: Operational vigor, especially under substantial loads, often sees the generation of heat, a factor not to be overlooked with the IPB072N15N3GATMA1. Employing thermal management strategies, such as heat sinks or thermal pads, can prove instrumental in maintaining component integrity during prolonged or intensive operations.

Conclusively, the cornerstone of maximizing the efficacy of the IPB072N15N3GATMA1 lies in adhering to its specific operational guidelines outlined in its datasheet, complemented by the nuanced understanding developed here. This synergy of knowledge empowers professionals to harness the full spectrum of capabilities offered by this exemplary MOSFET series.

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6. What is the process for return or replacement of IPB072N15N3GATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPB072N15N3GATMA1 we delivered, we will accept the replacement or return of the IPB072N15N3GATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB072N15N3GATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations