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Infineon Technologies IPB017N10N5LFATMA1

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Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
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    IPB017N10N5LFATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPB017N10N5LFATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPB017N10N5LFATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    IPB017N10N5LFATMA1 Typical application Circuitry

    The IPB017N10N5LFATMA1 belongs to the OptiMOSTM power MOSFET family, known for its prowess in energy efficiency and performance in power management applications. This product line is renowned for bringing about notable advancements in the realms of power density, system efficiency, and robustness.

    1. Pin-wise Connection Schema:

    - Drain (D): This is the main current-carrying terminal. In most application scenarios, especially in switching power supplies, this pin is connected to the main load or to other circuitry that the IPB017N10N5LFATMA1 governs.

    - Gate (G): Acting as the control terminal, the Gate pin is where the driving signal is applied. The voltage applied here determines the MOSFET's on/off state. Remember, gate-source voltage (VGS) thresholds should always be adhered to, to ensure safe and reliable operation.

    - Source (S): This terminal acts as the reference point for the Gate voltage and is the return path for the Drain current. Typically, in a ground-referenced load configuration, this pin is connected directly or indirectly to the system ground.

    2. Gate Protection: The gate oxide layer within the IPB017N10N5LFATMA1 is very delicate. To guard against possible electrostatic discharge (ESD) damages, it's prudent to employ a zener diode or a resistor in series with the gate.

    3. Thermal Management: Given that power dissipation can elevate device temperatures, ensure a suitable heat sink is in place, especially in applications with continuous high current or rapid switching.

    The IPB017N10N5LFATMA1, as a shining star in the OptiMOSTM lineup, offers a blend of performance and efficiency, catering to modern power management requisites. But, as with any sophisticated device, understanding its constraints and operating domains is pivotal. The manufacturer's datasheet remains an invaluable tome for those desiring a deep dive into its vast potential and boundaries. Always refer to it when architecting a design around this MOSFET.

    IPB017N10N5LFATMA1 informationIPB017N10N5LFATMA1 information


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    3. Are the IPB017N10N5LFATMA1 price and inventory displayed accurate?

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    6. What is the process for return or replacement of IPB017N10N5LFATMA1?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPB017N10N5LFATMA1 we delivered, we will accept the replacement or return of the IPB017N10N5LFATMA1 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IPB017N10N5LFATMA1.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

    7.How to contact us to get technical supports, such as IPB017N10N5LFATMA1 pin diagram, IPB017N10N5LFATMA1 datasheet?

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