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Name: IMZ120R030M1HXKSA1
Brand: Infineon Technologies
SKU: IMZ120R030M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IMZ120R030M1HXKSA1

Part No.:: IMZ120R030M1HXKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-4-1

Datasheet:: IMZ120R030M1HXKSA1.pdf

Description:: SICFET N-CH 1.2KV 56A TO247-4

In Stock:: 3430

Quantity:: Add To Cart

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IMZ120R030M1HXKSA1 Specifications

Packaging:
Tube
Series:
CoolSiC™
ProductStatus:
Active
FETType:
N-Channel
Technology:
SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss):
1200 V
Current-ContinuousDrain(Id)@25°C:
56A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
15V, 18V
RdsOn(Max)@IdVgs:
40mOhm @ 25A, 18V
Vgs(th)(Max)@Id:
5.7V @ 10mA
GateCharge(Qg)(Max)@Vgs:
63 nC @ 18 V
Vgs(Max):
+23V, -7V
InputCapacitance(Ciss)(Max)@Vds:
2120 pF @ 800 V
FETFeature:
-
PowerDissipation(Max):
227W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IMZ120R030M1HXKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IMZ120R030M1HXKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IMZ120R030M1HXKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IMZ120R030M1HXKSA1 information

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IMZ120R030M1HXKSA1 Typical application Circuitry

IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1 is a state-of-the-art Silicon Carbide (SiC) MOSFET, designed for high efficiency and high performance in power conversion applications.

Application Scenarios

IMZ120R030M1HXKSA1 is widely utilized in applications such as electric vehicle (EV) charging stations, solar inverters, high-performance power supplies, and energy storage systems, where efficiency, reliability, and thermal performance are critical.

Parameter Features

- High Breakdown Voltage: This SiC MOSFET features a high breakdown voltage, typically around 1200V, allowing it to handle high voltage applications with ease.

- Low On-Resistance (RDS(on)): Exhibits very low on-resistance, minimizing conduction losses and enhancing overall efficiency.

- Fast Switching Speeds: Capable of fast switching, which reduces switching losses and allows for higher efficiency in switching applications.

Circuit Connection in an Electric Vehicle Charging Station

In an EV charging station application, IMZ120R030M1HXKSA1 can be used in the power conversion stage to efficiently convert AC to DC power. Here's a detailed connection guide:

- AC Input Connection: The AC input from the grid is first connected to a rectifier circuit. This rectifier converts AC power to DC, which is then fed into the power conversion stage where IMZ120R030M1HXKSA1 is used.

- DC Link Capacitors: Before connecting to the IMZ120R030M1HXKSA1, the rectified DC is filtered using DC link capacitors to smooth out the voltage and provide a stable DC supply.

- Gate Drive Circuitry: The gate of the IMZ120R030M1HXKSA1 (pin 3) requires a specialized gate drive circuit to control the turning on and off of the MOSFET. This gate drive must be capable of providing the appropriate gate voltage and current to switch the SiC MOSFET efficiently.

- Power Stage Configuration: In the power stage, the IMZ120R030M1HXKSA1 (drain at pin 2, source at pin 1) is used in a half-bridge or full-bridge configuration depending on the specific requirements of the charging station. This includes connecting the drain and source to the appropriate points in the circuit to facilitate the conversion of DC back to AC or for DC-DC conversion, depending on the charger design.

- Cooling System: Due to the high power levels involved, a cooling system (such as a heatsink or liquid cooling) is essential to maintain the IMZ120R030M1HXKSA1 within its thermal limits, ensuring reliability and longevity.

Design Considerations

When designing circuits with IMZ120R030M1HXKSA1, several factors need to be considered:

- Gate Drive Requirements: Ensure the gate drive circuitry provides the correct voltage levels and timing to optimize the performance of the IMZ120R030M1HXKSA1, while preventing spurious turn-on/off events.

- Protection Mechanisms: Implement overcurrent, overvoltage, and overtemperature protection to safeguard the IMZ120R030M1HXKSA1 and the overall system from abnormal conditions.

- Parasitic Inductances: Minimize parasitic inductances in the layout to reduce the risk of oscillations and ensure stable operation, especially important due to the high switching speeds of SiC MOSFETs.

- Thermal Management: Develop an effective thermal management strategy to dissipate heat generated by the IMZ120R030M1HXKSA1 during operation, which is critical for maintaining efficiency and preventing thermal runaway.

Incorporating IMZ120R030M1HXKSA1 into an EV charging station involves careful consideration of the gate drive requirements, protection mechanisms, circuit layout, and thermal management to leverage the full benefits of SiC technology for efficient power conversion.

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6. What is the process for return or replacement of IMZ120R030M1HXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IMZ120R030M1HXKSA1 we delivered, we will accept the replacement or return of the IMZ120R030M1HXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IMZ120R030M1HXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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