What is the Additional Feature ?

Name: FQT1N80TF-WS
Brand: ON Semiconductor
SKU: FQT1N80TF-WS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FQT1N80TF-WS

Part No.:: FQT1N80TF-WS

Manufacturer:: ON Semiconductor

Package:: SOT-223-3

Datasheet:: FQT1N80TF-WS.pdf

Description:: MOSFET N-CH 800V 200MA SOT223-3

In Stock:: 2138

Quantity:: Add To Cart

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FQT1N80TF-WS Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
QFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
800 V
Current-ContinuousDrain(Id)@25°C:
200mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
20Ohm @ 100mA, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
7.2 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
195 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.1W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FQT1N80TF-WS this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FQT1N80TF-WS price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FQT1N80TF-WS to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FQT1N80TF-WS information

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FQT1N80TF-WS Typical application Circuitry

FQT1N80TF-WS

The FQT1N80TF-WS is a cutting-edge component within ON Semiconductor's portfolio, marking its significance in the realm of high-efficiency N-Channel MOSFETs. This transistor is specifically engineered for applications that demand high voltage and power efficiency, such as power supplies, LED drivers, and switching applications. Its design and manufacturing focus on delivering superior performance in terms of speed, power handling, and reliability.

1. Overview and Electrical Characteristics: The FQT1N80TF-WS belongs to a class of MOSFETs designed for optimizing power consumption and reducing losses in electrical circuits. It supports a drain-to-source voltage (V_DS) up to 800V, making it adept at managing high-voltage applications with efficiency. When selecting a power supply for circuits incorporating this MOSFET, it is vital to ensure the voltage does not exceed this threshold to preserve the integrity and longevity of the component.

2. Pin Configuration and Effective Connection Guide: Housed in a SOT-223 package, the FQT1N80TF-WS offers a compact yet powerful solution for electronic designs. It consists of three terminals: the Gate (G), Drain (D), and Source (S). For optimal operation, the Gate terminal should be accurately controlled with a voltage to switch the device on or off, the Drain is connected to the high-voltage line, and the Source to the circuit's common ground. Precise soldering and connection practices are paramount to ensure the device functions as intended without any performance degradation.

3. Circuit Integration for Peak Efficiency: To harness the full capabilities of the FQT1N80TF-WS, it is crucial to provide a clean and stable gate signal, ensuring fast and reliable switching. The electrical paths between the Drain and Source should be designed to minimize resistance and inductance, facilitating efficient current flow and preventing unnecessary power dissipation or signal distortion.

4. Thermal Management Strategies for Enhanced Durability: Given its ability to handle high voltages, the FQT1N80TF-WS can generate significant amounts of heat during operation. Implementing effective thermal management techniques, such as the use of heatsinks, thermal interface materials, and ensuring good airflow around the MOSFET, is essential to dissipate heat efficiently. This not only prevents thermal runaway but also contributes to the MOSFET's operational stability and lifespan.

5. Design Considerations for Improved System Performance: Incorporating the FQT1N80TF-WS into electronic systems requires thoughtful design, especially regarding the gate drive circuitry, to accommodate its high-voltage capability. Protective measures, like the use of gate resistors, can mitigate the effects of rapid switching and voltage spikes, ensuring the MOSFET operates within safe parameters. Ensuring compatibility with the Safe Operating Area (SOA) of the FQT1N80TF-WS is crucial for maintaining system reliability and performance.

6. Selecting Compatible Components for a Cohesive Design: When integrating the FQT1N80TF-WS into a design, it is essential to select accompanying components that match its high-voltage handling capabilities. This includes choosing gate drivers with appropriate voltage and current ratings, passive components like resistors and capacitors that can withstand the operational stresses, and PCB materials that offer suitable thermal and electrical characteristics.

The FQT1N80TF-WS exemplifies ON Semiconductor's commitment to providing advanced solutions for power management and efficiency. With its high-voltage handling capabilities, compact form factor, and emphasis on reliability, this MOSFET is an excellent choice for designers looking to improve the performance and efficiency of their power conversion and management applications.

FQT1N80TF-WS FAQ

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6. What is the process for return or replacement of FQT1N80TF-WS?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQT1N80TF-WS we delivered, we will accept the replacement or return of the FQT1N80TF-WS only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQT1N80TF-WS.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations