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ON Semiconductor FQP50N06L-EPKE0003

Part No.:: FQP50N06L-EPKE0003

Manufacturer:: ON Semiconductor

Package:: TO-220-3

Datasheet:

Description:: MOSFET N-CH 60V 65A TO220-3

In Stock:: 2921

Quantity:: Add To Cart

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FQP50N06L-EPKE0003 Specifications

Packaging:
Tube
Series:
QFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
52.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
5V, 10V
RdsOn(Max)@IdVgs:
21mOhm @ 26.2A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
32 nC @ 5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1630 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
121W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

FQP50N06L-EPKE0003 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FQP50N06L-EPKE0003 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FQP50N06L-EPKE0003 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FQP50N06L-EPKE0003 information

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FQP50N06L-EPKE0003 Typical application Circuitry

The FQP50N06L-EPKE0003 is a specialized variant within the FQP series, known for its robust N-channel Logic Level MOSFETs designed for high-efficiency power switching applications. This particular model is engineered to handle high power levels with enhanced performance features, making it suitable for a broad spectrum of applications, including power supplies, motor controls, and automotive systems. The "L" in its name indicates that it is a logic-level MOSFET, meaning it can be driven directly by logic-level voltages, making it compatible with low-voltage control signals typically found in microcontrollers and digital circuits.

1. Logic-Level MOSFET Characteristics: The FQP50N06L-EPKE0003 is designed to operate efficiently with logic-level gate drive voltages, which is a key feature that differentiates it from standard MOSFETs requiring higher gate voltages. This capability allows for direct interfacing with microcontroller outputs or other low-voltage digital signals, facilitating simpler and more energy-efficient control in power switching applications.

2. Pin Configuration and Electrical Connection: The FQP50N06L-EPKE0003 typically features a three-pin configuration common to MOSFETs, consisting of the Gate (G), Drain (D), and Source (S) pins. The Drain pin is linked to the high side of the load, the Source pin is connected to either the low side or common ground, and the Gate pin is utilized to control the MOSFET's switching state using a logic-level voltage. Accurate connection of these pins is crucial for the proper functioning of the MOSFET within the circuit.

3. Gate Drive and Power Supply Considerations: For optimal operation of the FQP50N06L-EPKE0003, the gate drive circuit should provide a voltage within the logic-level range to the Gate pin to switch the MOSFET on and off. This logic-level compatibility allows for direct driving of the MOSFET with voltages typically available from microcontrollers (e.g., 3.3V or 5V), simplifying circuit design and reducing power consumption.

4. Load Connection and Current Handling: In connecting the FQP50N06L-EPKE0003 to the load, it's essential to consider its capability to handle up to 50A of continuous drain current, as indicated by its datasheet. The load should be connected between the Drain pin and the power supply, ensuring that the current and power dissipation do not exceed the MOSFET's maximum ratings to maintain reliable operation and prevent overheating.

5. Thermal Management for Enhanced Reliability: Effective thermal management is crucial for maintaining the FQP50N06L-EPKE0003 within its safe operating temperature range, especially in high-current applications. Employing appropriate heat sinking and ensuring good thermal contact with the PCB can significantly enhance the MOSFET's reliability and longevity by effectively dissipating the heat generated during operation.

6. Integration into Electronic Systems: Integrating the FQP50N06L-EPKE0003 into an electronic system typically involves additional components like pull-down resistors on the Gate to ensure the MOSFET remains off when not explicitly driven, flyback diodes across inductive loads to protect against voltage spikes, and decoupling capacitors near the power supply pins to stabilize the supply voltage and filter out noise.

In summary, the FQP50N06L-EPKE0003 is a high-performance Logic Level MOSFET from the FQP series, designed for efficient and reliable power switching with logic-level control signals. Implementing this MOSFET involves understanding its pin configuration, providing appropriate gate drive voltages, ensuring correct load connection for high current handling, implementing effective thermal management, and considering additional circuit components for safe and efficient operation within various high-power applications.

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6. What is the process for return or replacement of FQP50N06L-EPKE0003?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQP50N06L-EPKE0003.

(3)The PartNo is unused and only in the original unpacked packaging.

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