What is the Additional Feature ?

Name: FQD6N40CTM
Brand: ON Semiconductor
SKU: FQD6N40CTM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FQD6N40CTM

Part No.:: FQD6N40CTM

Manufacturer:: ON Semiconductor

Package:: TO-252AA

Datasheet:: FQD6N40CTM.pdf

Description:: MOSFET N-CH 400V 4.5A DPAK

In Stock:: 3713

Quantity:: Add To Cart

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FQD6N40CTM this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FQD6N40CTM price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FQD6N40CTM to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FQD6N40CTM Typical application Circuitry

The FQD6N40CTM is part of the FQD series, notable for its N-channel MOSFETs designed for high-efficiency power switching applications. This series is optimized for use in electronic circuits that require high voltage handling and fast switching capabilities, such as in power supplies, lighting systems, and motor controls. The FQD6N40CTM, in particular, is characterized by its 400V drain-source voltage (V_DS) and a 6A continuous drain current (I_D), making it well-suited for applications that demand high breakdown voltage and moderate current capacity.

1. High-Voltage N-Channel MOSFET Design: The core functionality of the FQD6N40CTM is defined by its ability to efficiently switch high-voltage loads while maintaining low on-resistance (R_DS(on)). This characteristic is essential for minimizing power losses in applications that involve high voltage switching, contributing to the overall energy efficiency of the system.

2. Pin Configuration for Efficient Switching: The FQD6N40CTM typically comes in a TO-252 package and features a standard three-pin MOSFET configuration, consisting of the Gate (G), Drain (D), and Source (S) pins. The Gate pin is used to control the MOSFET's on and off states by applying a voltage relative to the Source. The Drain pin is connected to the high-voltage side of the load, while the Source pin is connected to the circuit's ground or the low-voltage side of the load. Ensuring correct and secure connections to these pins is vital for the MOSFET's operation and the circuit's performance.

3. Gate Drive Considerations: To achieve optimal performance with the FQD6N40CTM, the gate drive circuit must provide a suitable voltage to the Gate pin to fully enhance the MOSFET and achieve minimal R_DS(on). This involves ensuring that the gate-source voltage (V_GS) is within the specified threshold range to turn the MOSFET on and carefully controlling the gate drive to avoid exceeding the maximum V_GS rating, which could damage the device.

4. Load Connection and Current Handling: In connecting the FQD6N40CTM to the load, it is important to consider the MOSFET's capability to handle up to 6A of continuous drain current. The load should be connected to the Drain pin, with attention to the circuit design to ensure that the current and power dissipation do not exceed the MOSFET's ratings, thereby preventing overheating and ensuring reliable operation.

5. Thermal Management for Device Reliability: Given the power dissipation that can occur in the FQD6N40CTM during high-voltage switching, effective thermal management is crucial. This may involve the use of heat sinks or other cooling methods to dissipate heat efficiently and maintain the MOSFET within its safe operating temperature range, thus enhancing the device's reliability and lifespan.

6. Circuit Protection and Safety: In circuits utilizing the FQD6N40CTM, incorporating protection mechanisms such as overcurrent protection, overvoltage protection, and thermal shutdown can significantly enhance the safety and reliability of the system. These features help safeguard the MOSFET and the load from potential damage due to abnormal operating conditions.

In summary, the FQD6N40CTM is a high-voltage N-channel MOSFET from the FQD series, designed for efficient power switching in high-voltage applications. Implementing this MOSFET involves understanding its three-pin configuration, providing appropriate gate drive, carefully connecting the load to handle high voltages and currents, implementing robust thermal management, and including circuit protection features to ensure safe and reliable operation in various electronic systems.

FQD6N40CTM information

FQD6N40CTM Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
QFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
400 V
Current-ContinuousDrain(Id)@25°C:
4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
1Ohm @ 2.25A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
20 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
625 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 48W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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6. What is the process for return or replacement of FQD6N40CTM?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQD6N40CTM.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations