What is the Additional Feature ?

Name: FQD3P50TM
Brand: ON Semiconductor
SKU: FQD3P50TM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FQD3P50TM

Part No.:: FQD3P50TM

Manufacturer:: ON Semiconductor

Package:: TO-252AA

Datasheet:: FQD3P50TM.pdf

Description:: MOSFET P-CH 500V 2.1A DPAK

In Stock:: 5708

Quantity:: Add To Cart

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FQD3P50TM Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
QFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
500 V
Current-ContinuousDrain(Id)@25°C:
2.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.9Ohm @ 1.05A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
23 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
660 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 50W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FQD3P50TM this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FQD3P50TM price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FQD3P50TM to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FQD3P50TM information

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FQD3P50TM Typical application Circuitry

FQD3P50TM

The FQD3P50TM is a P-channel MOSFET that excels in high voltage switching applications. This semiconductor device is pivotal in the domain of power management, where it is employed in a variety of circuits such as power supplies, motor controllers, and lighting systems.

Primary Function: The essence of the FQD3P50TM lies in its role as an electronic switch. It orchestrates the flow of electricity within a circuit, facilitating the control of high voltage loads upon the application of a voltage to its gate terminal.

Utilization in Various Domains: The adaptability of the FQD3P50TM is demonstrated through its employment in diverse applications, including:

- Voltage conversion systems (DC-DC converters)

- Power supply units (AC-DC power supplies)

- Motor control circuits

- Lighting drivers (LED drivers)

- Battery management systems

Notable Specifications:

- Maximum Drain-Source Voltage (V_DS): -500V

- Continuous Drain Current (I_D): -2.7A

- Gate-Source Voltage (V_GS) Tolerance: ±30V

- Total Power Dissipation (P_D): 30W

- On-Resistance (R_DS(on)): 1.7Ω at V_GS = -10V

Circuit Design for a Battery Management System:

1. Battery Management Objective: In a battery management system, the FQD3P50TM is utilized to regulate the charging and discharging processes of a battery pack.

2. Charge Control: A microcontroller generates control signals to manage the charging process. These signals are applied to the gate of the FQD3P50TM to modulate the charging current.

3. Gate Drive Configuration: A dedicated gate drive circuit ensures the provision of the appropriate voltage and current to the gate of the FQD3P50TM, facilitating accurate switching and MOSFET protection.

4. Voltage Sensing: Voltage sensing circuits monitor the battery pack's voltage levels, providing feedback to the microcontroller for precise charge control.

5. Current Regulation: The FQD3P50TM, in conjunction with a current sensing resistor, regulates the charging current to prevent overcharging of the battery pack.

6. Power Source Connection: The source terminal of the FQD3P50TM is connected to the positive terminal of the battery pack, while the drain is linked to the charging circuit.

Design Considerations:

- Thermal Management: Adequate heat dissipation is critical for the FQD3P50TM to effectively manage power and avoid thermal overload.

- Gate Voltage Optimization: The gate drive voltage should be meticulously chosen to fully activate the FQD3P50TM without exceeding its maximum V_GS limit.

- Circuit Protection: Incorporating protective measures such as overcurrent, overvoltage, and thermal shutdown is crucial for ensuring circuit reliability.

- Battery Characteristics: The characteristics of the battery pack, including voltage and capacity, should be taken into account when designing the battery management system.

In summary, the FQD3P50TM is a robust P-channel MOSFET, ideal for high voltage switching applications. Its capability to manage high voltage loads makes it a valuable component in power management and battery management systems. Designing a circuit with the FQD3P50TM requires careful consideration of thermal management, gate drive voltage, and protective measures to ensure its efficient and reliable operation.

FQD3P50TM FAQ

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6. What is the process for return or replacement of FQD3P50TM?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQD3P50TM we delivered, we will accept the replacement or return of the FQD3P50TM only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQD3P50TM.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations