What is the Additional Feature ?

Name: FQB1P50TM
Brand: ON Semiconductor
SKU: FQB1P50TM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FQB1P50TM

Part No.:: FQB1P50TM

Manufacturer:: ON Semiconductor

Package:: D²PAK (TO-263)

Datasheet:: FQB1P50TM.pdf

Description:: MOSFET P-CH 500V 1.5A D2PAK

In Stock:: 1496

Quantity:: Add To Cart

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FQB1P50TM Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
QFET®
ProductStatus:
Last Time Buy
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
500 V
Current-ContinuousDrain(Id)@25°C:
1.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
10.5Ohm @ 750mA, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
14 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
350 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
3.13W (Ta), 63W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FQB1P50TM this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FQB1P50TM price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FQB1P50TM to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FQB1P50TM information

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FQB1P50TM Typical application Circuitry

The FQB1P50TM is part of the FQB series, renowned for its P-channel MOSFETs engineered to provide efficient power switching and control in a wide array of applications. These devices are particularly suited for use in power management circuits, load switching, and as part of the charging circuits in battery-powered devices. The FQB1P50TM, with its -150V drain-source voltage (V_DS) and 0.88A continuous drain current (I_D), is optimized for applications requiring high breakdown voltage and moderate current handling with P-channel convenience for high-side switching.

1. P-Channel MOSFET Operational Principles: The FQB1P50TM leverages the P-channel MOSFET technology, allowing for easier integration into high-side switch configurations due to its ability to be turned on by applying a negative voltage to the gate relative to the source. This feature is particularly advantageous in circuits where load switching is controlled directly from a positive supply rail.

2. Pin Configuration and Connection Strategy: The FQB1P50TM typically comes in a TO-263 package and includes three primary pins: the Gate (G), Drain (D), and Source (S). The Gate pin is used to control the switching state of the MOSFET by applying a negative voltage with respect to the Source. The Drain pin is connected to the load, and the Source pin is connected to the higher potential in the circuit, opposite to N-channel MOSFET configurations. Proper connection of these pins is essential for the MOSFET's functionality and the efficient operation of the power control circuit.

3. Gate Drive Considerations for Efficient Switching: To ensure optimal performance of the FQB1P50TM, the gate drive circuit must provide a suitable negative voltage to the Gate pin to fully enhance the MOSFET and minimize on-resistance (R_DS(on)). It's crucial to maintain the gate-source voltage (V_GS) within the specified limits to prevent damage to the MOSFET and ensure reliable operation.

4. Load Connection and Current Management: When connecting the FQB1P50TM to the load, attention should be given to its capability to handle up to 0.88A of continuous drain current. The load should be connected to the Drain pin, with considerations for the circuit design to ensure that the current through the MOSFET does not exceed its maximum ratings, thereby maintaining the device's integrity and preventing overheating.

5. Thermal Management for Device Longevity: Given the FQB1P50TM's power handling capabilities, effective thermal management is critical. Implementing adequate heat dissipation measures, such as using heat sinks or ensuring good thermal contact with the PCB, can significantly enhance the MOSFET's reliability by keeping it within its safe operating temperature range.

6. Integration into Electronic Circuits: Incorporating the FQB1P50TM into electronic systems often involves additional components such as current-limiting resistors, flyback diodes for inductive loads, and capacitors for voltage stabilization. These components help ensure the smooth operation of the power control circuit and protect the MOSFET from potential stress or damage due to abnormal operating conditions.

In summary, the FQB1P50TM is a high-voltage P-channel MOSFET from the FQB series, designed for efficient high-side power switching and control in various applications. Implementing this MOSFET involves understanding its P-channel configuration, providing appropriate gate drive voltages, correctly connecting the load for effective power management, ensuring robust thermal management, and incorporating necessary circuit protection features to enhance the performance and reliability of power control systems.

FQB1P50TM FAQ

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6. What is the process for return or replacement of FQB1P50TM?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQB1P50TM we delivered, we will accept the replacement or return of the FQB1P50TM only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQB1P50TM.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations