What is the Additional Feature ?

Name: FDV303N-F169
Brand: onsemi
SKU: FDV303N-F169
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi FDV303N-F169

Part No.:: FDV303N-F169

Manufacturer:: onsemi

Package:: SOT-23-3

Datasheet:

Description:: MOSFET N-CH 25V 680MA SOT23

In Stock:: 3572

Quantity:: Add To Cart

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FDV303N-F169 Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
25 V
Current-ContinuousDrain(Id)@25°C:
680mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.7V, 4.5V
RdsOn(Max)@IdVgs:
450mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
2.3 nC @ 4.5 V
Vgs(Max):
8V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
350mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FDV303N-F169 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDV303N-F169 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDV303N-F169 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDV303N-F169 information

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FDV303N-F169 Typical application Circuitry

The FDV303N-F169 belongs to the renowned family of N-channel enhancement-mode field-effect transistors (FETs). Famed for their pivotal role in energy-saving circuits owing to their efficient switching dynamics, these N-channel FETs are indispensable for myriad electronics applications. Let's delve deeper into the intricacies of the FDV303N-F169, ensuring a thorough exploration of its paramount connection specifics.

1. Source (Pin S): Within the FDV303N-F169, the Source plays a fundamental role as it is responsible for feeding the drain current. In the layout of N-channel transistors, this pin is typically tied to the circuit's lower potential, frequently the ground.

2. Gate (Pin G): Serving as the decision-making hub of the FDV303N-F169, the Gate decides the on-off state of the transistor. A positive voltage concerning the Source springs the FET into action. Conversely, no voltage or a negative one relegates it to the off state. It's imperative to ensure that the FDV303N-F169's Gate isn't exposed to voltages that overshoot its gate-source voltage limit.

3. Drain (Pin D): The Drain is where the FDV303N-F169 culminates its task by releasing the drain current. It gets connected to the component you intend to control, be it a cluster of LEDs, a motor, or any load.

4. Thermal Management: The FDV303N-F169, while efficient, can still generate heat under high current conditions. Implement a solid thermal management strategy by considering heat sinks or efficient PCB heat dissipation techniques.

5. ESD Precautions: Like many of its kin, the FDV303N-F169 can be sensitive to Electrostatic Discharge (ESD). Utilize ESD safe work environments and protection techniques when embedding this FET into circuitry.

6. Circuit Topology: When integrating the FDV303N-F169 into more complex circuitry, it's beneficial to ponder its position within the topology. Depending on the application, the FET can function in various configurations like common source, common drain, or common gate.

7. Ancillary Components: Often, it's prudent to employ ancillary components like pull-down resistors at the Gate to ensure that the FDV303N-F169 remains in a known state when not being actively driven.

8. Oscillation Prevention: Especially when dealing with capacitive loads, the FDV303N-F169 could oscillate. Introducing a gate resistor can curtail such occurrences.

9. Signal Integrity: Board layout and trace design play a crucial role in maintaining signal integrity, especially in high-speed applications with the FDV303N-F169.

To encapsulate, the FDV303N-F169 stands as a testament to the N-channel FET's prowess and versatility. Proper integration, rooted in a nuanced grasp of its traits, optimizes its performance across various circuits. Always make it a point to consult the manufacturer's datasheet for comprehensive specifics and insights about the FDV303N-F169.

FDV303N-F169 FAQ

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3. Are the FDV303N-F169 price and inventory displayed accurate?

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6. What is the process for return or replacement of FDV303N-F169?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDV303N-F169 we delivered, we will accept the replacement or return of the FDV303N-F169 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDV303N-F169.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations