What is the Additional Feature ?

Name: FDPF33N25TRDTU
Brand: ON Semiconductor
SKU: FDPF33N25TRDTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDPF33N25TRDTU

Part No.:: FDPF33N25TRDTU

Manufacturer:: ON Semiconductor

Package:: TO-220F (LG-Formed)

Datasheet:: FDPF33N25TRDTU.pdf

Description:: MOSFET N-CHANNEL 250V TO220F

In Stock:: 432

Quantity:: Add To Cart

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FDPF33N25TRDTU Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
250 V
Current-ContinuousDrain(Id)@25°C:
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
94mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
48 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
2135 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
37W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

FDPF33N25TRDTU this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDPF33N25TRDTU price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDPF33N25TRDTU to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDPF33N25TRDTU information

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FDPF33N25TRDTU Typical application Circuitry

FDPF33N25TRDTU

The FDPF33N25TRDTU is a high-voltage, high-current N-channel MOSFET designed by ON Semiconductor. It is primarily used in power management applications, such as switching regulators, power inverters, motor drivers, and other circuits that require efficient power handling and switching capabilities.

FDPF33N25TRDTU Specifications:

1. Drain-Source Voltage (Vdss): 250V, indicating the maximum voltage the MOSFET can handle between its drain and source terminals.

2. Continuous Drain Current (Id): 33A, highlighting the maximum current the device can conduct continuously.

3. On-Resistance (Rdson): 0.085Ω at Vgs = 10V, demonstrating the MOSFET's on-state low resistance between the drain and source.

4. Gate-Source Voltage (Vgs): The maximum voltage that can be applied between the source and gate terminals is indicated by the symbol ±30V.

Use in an LED Driver with High Power:

High-power LED driver circuits frequently employ the FDPF33N25TRDTU to effectively manage the current passing through the LEDs.

Circuit Connection Guide:

1. Power Supply Connection: Attach the power supply's positive terminal to the FDPF33N25TRDTU's drain terminal (D).

2. LED Connection: Attach the anode of the high-power LED to the source terminal (S) of the FDPF33N25TRDTU, with the cathode of the LED connected to the ground.

3. Gate Drive: Connect the gate terminal (G) to the output of a PWM controller or a current regulator circuit, which will modulate the gate voltage to control the LED brightness.

4. Current Sensing Resistor: Place a current sensing resistor between the source terminal and the ground to monitor the LED current for feedback control.

Considerations for Design:

- Voltage of the Gate Drive: Make sure the gate drive voltage is both within the designated Vgs range and high enough to properly activate the MOSFET.

- Heat Dissipation: Implement proper heat sinking or cooling mechanisms to manage the heat generated by the MOSFET during operation, especially in high-power LED applications.

- Current Regulation: Use a precise current regulator circuit to maintain a constant current through the LED, ensuring consistent brightness and preventing thermal runaway.

- Protection Features: Consider integrating overcurrent, overvoltage, and overtemperature protection features to enhance circuit reliability and safeguard the LED and MOSFET.

In high-power LED driver circuits, the FDPF33N25TRDTU serves as a key component for controlling the current through the LED, enabling efficient power management and brightness control. Designing a circuit with this MOSFET requires careful consideration of gate drive requirements, thermal management, current regulations, and protective measures to ensure safe and efficient operation.

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6. What is the process for return or replacement of FDPF33N25TRDTU?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDPF33N25TRDTU.

(3)The PartNo is unused and only in the original unpacked packaging.

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