FDPF33N25T this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDPF33N25T price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDPF33N25T to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Features of FDPF33N25T:
1. Drain-Source Voltage (Vdss): 250V This is the highest voltage that the MOSFET is capable of supporting between its source and drain terminals.
2. Continuous Drain Current (Id): 33A, highlighting the maximum current the device can conduct continuously.
3. On-Resistance (Rdson): 0.085Ω at Vgs = 10V, showcasing the resistance between the drain and source when the MOSFET is in the on state.
4. Gate-Source Voltage (Vgs): The maximum voltage that can be placed between the gate and source terminals is indicated by the notation ±30V.
Utilization in an Intermittent Power Source:
Because of its effectiveness in handling high voltage and current, the FDPF33N25T is frequently utilized in switching power supply circuits.
An Introduction to Circuit Connections
1. Power source connector: Join the drain terminal (D) of the FDPF33N25T with the positive connector from the power source.
2. Load Connection: Attach the load to the source terminal (S) of the FDPF33N25T, with the other end of the load connected to the ground.
3. Gate Drive: Connect the gate terminal (G) to the output of a PWM controller, which will drive the gate voltage to turn the MOSFET on and off.
4. Flyback Diode: To safeguard the MOSFET against voltage spikes resulting from inductive loads, place a flyback diode across the load.
Design Points to Remember:
- Gate Drive Voltage: Verify that the gate drive voltage is both within the designated Vgs range and high enough to completely activate the MOSFET.
- Heat Dissipation: Use appropriate cooling or heat-sink techniques to control the heat produced by the MOSFET while it is operating.
- Parasitic Inductance: To lessen voltage overshoot and switching losses, minimize parasitic inductance in the circuit design.
- Protection Features: Consider integrating overcurrent and overtemperature protection features to enhance system reliability.
In switching power supply circuits, the FDPF33N25T serves as a critical component in the switching mechanism, enabling efficient conversion of input voltage to a regulated output voltage. Designing a circuit with this MOSFET requires careful consideration of gate drive requirements, thermal management, layout optimization, and protective measures to ensure efficient and reliable operation.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDPF33N25T we delivered, we will accept the replacement or return of the FDPF33N25T only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of FDPF33N25T.
(3)The PartNo is unused and only in the original unpacked packaging.
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(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
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