What is the Additional Feature ?

Name: FDP33N25
Brand: ON Semiconductor
SKU: FDP33N25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDP33N25

Part No.:: FDP33N25

Manufacturer:: ON Semiconductor

Package:: TO-220-3

Datasheet:: FDP33N25.pdf

Description:: MOSFET N-CH 250V 33A TO220-3

In Stock:: 4723

Quantity:: Add To Cart

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FDP33N25 Specifications

Packaging:
Tube
Series:
UniFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
250 V
Current-ContinuousDrain(Id)@25°C:
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
94mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
48 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
2135 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
235W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

FDP33N25 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDP33N25 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDP33N25 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDP33N25 information

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FDP33N25 Typical application Circuitry

The FDP33N25 is a part of the robust UniFET™ MOSFET series, known for its high-voltage N-Channel power MOSFETs designed to deliver superior switching performance and high efficiency in applications. This particular model, with a 250V voltage rating and a 33A continuous drain current capability, is optimized for power supply circuits, converters, and motor drive applications where reliability and power efficiency are critical.

1. Essential Characteristics of the FDP33N25 Series: The FDP33N25 leverages advanced UniFET™ technology to provide low on-resistance and high switching speed, making it highly efficient for high-power applications. Its robust design ensures reliable operation even under high stress, making it suitable for a wide range of power applications.

2. Pin Configuration and Connection Details: The FDP33N25 typically comes in a TO-220 package, featuring three terminals: the Drain (D), Gate (G), and Source (S). The Drain is the high-voltage terminal connected to the load. The Gate terminal controls the MOSFET's switching state and requires a precise driving signal for efficient operation. The Source terminal is connected to the ground or the low side of the circuit and provides the return path for the drain current.

3. Integrating the FDP33N25 into Electronic Circuits: To incorporate the FDP33N25 into a circuit, connect the Drain terminal to the point in the circuit where the high-voltage load or power needs to be controlled. The Gate terminal should be driven by a gate driver circuit capable of delivering the appropriate voltage level to switch the MOSFET effectively. The Source terminal must be securely connected to the system ground, ensuring a stable and low-resistance path for the current.

4. Optimizing Performance with the FDP33N25: Achieving optimal performance from the FDP33N25 involves ensuring that the gate drive signal is well-controlled, with the correct voltage level and waveform to minimize switching losses and avoid overshoot or ringing. Adequate thermal management is also crucial, as efficient heat dissipation is necessary to maintain the MOSFET within its safe operating temperature range and ensure long-term reliability.

5. Design Considerations for Systems Using the FDP33N25: When designing systems that incorporate the FDP33N25, it's important to take into account the MOSFET's voltage and current ratings, ensuring that the circuit operates within these parameters. The layout should be optimized to reduce parasitic inductances and resistances, especially in the gate drive path, to enhance switching performance and efficiency.

6. Versatile Applications of the FDP33N25: The FDP33N25's high efficiency and fast switching capabilities make it suitable for a variety of applications, including power supplies, DC-DC converters, and motor drives in industrial, automotive, and consumer electronics, where its performance can significantly improve energy efficiency and system reliability.

In conclusion, the FDP33N25 from the UniFET™ MOSFET series is designed for high-efficiency power management tasks, offering low on-resistance and high-speed switching. Its integration into electronic systems necessitates careful attention to pin connections, gate driving techniques, and thermal management to leverage its full capabilities, ensuring enhanced performance and reliability in power electronic applications.

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6. What is the process for return or replacement of FDP33N25?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDP33N25 we delivered, we will accept the replacement or return of the FDP33N25 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDP33N25.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations