FDN5630-G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDN5630-G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDN5630-G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Functionality: For quick switching in low-voltage applications, the FDN5630-G is a P-channel enhancement-mode MOSFET. Because of its quick switching speed and low on-resistance, it is frequently used in power management circuits.
Applications: This MOSFET is used in load switching, DC-DC converters, and portable device power management, among other areas. In battery-operated gadgets, where effective power management is essential, it is especially helpful.
Parameters: Some key parameters of the FDN5630-G include a drain-source voltage (V_DS) of -20V, a gate-source voltage (V_GS) of ±8V, and a continuous drain current (I_D) of -2.5A. Its low threshold voltage (V_GS(th)) makes it suitable for low-voltage operations.
Circuit Design for a Load Switch:
1. Load Connection: Connect the load between the drain (Pin 2) of the FDN5630-G and the positive supply voltage.
2. Gate Drive: Connect a control signal to the gate (Pin 1) of the FDN5630-G. This signal will turn the MOSFET on and off, controlling the power to the load.
3. Source Connection: Connect the source (Pin 3) of the FDN5630-G to the ground.
4. Pull-down Resistor: Place a pull-down resistor between the gate and the source of the MOSFET to ensure it remains off when the control signal is not present.
Design Considerations:
1. Gate Drive Voltage: Ensure the gate drive voltage does not exceed the maximum V_GS rating to avoid damaging the MOSFET.
2. Thermal Management: To avoid overheating, pay close attention to the FDN5630-G's thermal dissipation, particularly in high current applications.
3. Switching Speed: Since the FDN5630-G is made for high-speed switching, take into account the switching speed needs of your application.
4. Protection: To shield the MOSFET from voltage spikes, use protection measures such a diode across the load.
You may use the FDN5630-G in your circuit designs by following these instructions and taking your application's particular requirements into account.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDN5630-G we delivered, we will accept the replacement or return of the FDN5630-G only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of FDN5630-G.
(3)The PartNo is unused and only in the original unpacked packaging.
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(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
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