FDN5630-B8 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDN5630-B8 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDN5630-B8 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Functionality: The FDN5630-B8 is a P-channel enhancement-mode MOSFET that is used for fast switching in low voltage circuits. Its low on-resistance and fast switching characteristics make it suitable for power management applications.
Applications: This MOSFET is commonly used in power management circuits for portable devices, load switching, and DC-DC converters. It is ideal for applications where efficient power management is essential.
Parameters: Key parameters of the FDN5630-B8 include a drain-source voltage (V_DS) of -20V, a gate-source voltage (V_GS) of ±8V, and a continuous drain current (I_D) of -2.5A. Its low threshold voltage (V_GS(th)) allows for operation at low voltages.
Circuit Design for a Battery Protection Circuit:
1. Battery Connection: Connect the battery's positive terminal to the drain (Pin 2) of the FDN5630-B8.
2. Load Connection: Connect the load to the source (Pin 3) of the FDN5630-B8.
3. Control Signal: Connect a control signal to the gate (Pin 1) of the FDN5630-B8. This signal will control the MOSFET's operation, enabling or disabling the connection between the battery and the load.
4. Gate Biasing: Use a pull-up resistor between the gate and the battery positive terminal to ensure the MOSFET is normally off when no control signal is applied.
Design Considerations:
1. Gate Voltage Limit: Ensure that the gate voltage does not exceed the maximum V_GS rating to avoid damaging the MOSFET.
2. Thermal Considerations: Monitor the thermal dissipation of the FDN5630-B8, especially in applications with high current, to prevent overheating.
3. Switching Frequency: Consider the switching frequency of your application, as the FDN5630-B8 is designed for high-speed switching.
4. Protection Features: Implement protection mechanisms, such as overcurrent and overtemperature protection, to safeguard the circuit and the MOSFET.
By considering these factors and tailoring the circuit design to the specific needs of your application, you can effectively integrate the FDN5630-B8 into your electronic designs.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDN5630-B8 we delivered, we will accept the replacement or return of the FDN5630-B8 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of FDN5630-B8.
(3)The PartNo is unused and only in the original unpacked packaging.
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(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
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