What is the Additional Feature ?

Name: FDN5618P-B8
Brand: ON Semiconductor
SKU: FDN5618P-B8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDN5618P-B8

Part No.:: FDN5618P-B8

Manufacturer:: ON Semiconductor

Package:: SuperSOT™-3

Datasheet:

Description:: FET -60V 1.7 MOHM SSOT3

In Stock:: 3689

Quantity:: Add To Cart

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FDN5618P-B8 Specifications

Packaging:
Tape & Reel (TR)
Series:
PowerTrench®
ProductStatus:
Obsolete
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
1.25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
170mOhm @ 1.25A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
13.8 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
430 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
460mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FDN5618P-B8 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDN5618P-B8 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDN5618P-B8 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDN5618P-B8 information

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FDN5618P-B8 Typical application Circuitry

FDN5618P-B8

The FDN5618P-B8 is a variant of the FDN5618P, which is a P-Channel MOSFET designed for efficient power switching and amplification in electronic circuits. Just like the standard FDN5618P, it is particularly suitable for high-side switching applications. Typical applications include load switching, power management in portable devices, and as a component in voltage regulators and power amplifiers. A common application for the FDN5618P-B8 is in a load-switch circuit for power management in portable electronic devices. Here's a detailed implementation of the FDN5618P-B8 in a load-switch circuit:

1. P-Channel MOSFET: The FDN5618P-B8, as a P-Channel device, is effective for high-side switching applications, allowing efficient control of power flow with a negative gate-source voltage.

2. Usage in Load Switch Circuits: This MOSFET is commonly used in load-switching applications, efficiently managing the power supplied to various components in portable devices.

3. Circuit Integration for Load Switching: In a load-switch circuit, the FDN5618P-B8 (pin 1 as source, pin 2 as gate, and pin 3 as drain) is used to control the connection between the power source and the load.

4. Gate Voltage Control for Switching: The gate of the FDN5618P-B8 (pin 2) is connected to a control circuit or microcontroller, which modulates the gate voltage to turn the MOSFET on or off, thereby controlling the power to the load.

5. Voltage and Current Specifications: Ensuring the FDN5618P-B8 operates within its specified voltage and current limits is crucial for maintaining efficiency and preventing damage.

6. Thermal Management: To keep the MOSFET from overheating, adequate heat dissipation is required, particularly in high-current applications.

7. Protective Circuitry: Including over-voltage, over-current, and thermal protection in the circuit design enhances the safety and longevity of the FDN5618P-B8.

8. Circuit Stability Enhancement: Employing additional components like resistors and capacitors helps stabilize the circuit and protect the FDN5618P-B8 from transient voltages and currents.

In summary, the FDN5618P-B8, as a P-Channel MOSFET, is highly suitable for load-switch applications in portable electronic devices. Its efficiency in controlling power distribution and its suitability for high-side switching are significant advantages. However, careful attention to electrical specifications, thermal management, and the inclusion of protective and stabilizing components is crucial for a successful and reliable circuit design.

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6. What is the process for return or replacement of FDN5618P-B8?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDN5618P-B8.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations