What is the Additional Feature ?

Name: FDL100N50F
Brand: onsemi
SKU: FDL100N50F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi FDL100N50F

Part No.:: FDL100N50F

Manufacturer:: onsemi

Package:: TO-264-3

Datasheet:: FDL100N50F.pdf

Description:: MOSFET N-CH 500V 100A TO264-3

In Stock:: 5143

Quantity:: Add To Cart

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FDL100N50F Specifications

Packaging:
Tube
Series:
UniFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
500 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
55mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
238 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
12000 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2500W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

FDL100N50F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDL100N50F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDL100N50F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDL100N50F information

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FDL100N50F Typical application Circuitry

The FDL100N50F is a power MOS FET from Fair child Semiconductor, which is designed for high current and high voltage applications. The drain-to-source breakdown voltage of this specific MOS FET is 500V, and its continuous drain current rating is 100A. Here is a detailed connection method for the FDL100N50F in a typical application:

1. Drain Connection: The drain of the FDL100N50F is connected to the load that you want to control. The drain is the primary current-carrying terminal and is often connected to the higher voltage side of the load. The drain pin is marked as 'D' on the MOS FET package.

2. Source Connection: The source pin of the FDL100N50F is typically connected to the ground or the lower voltage side of the circuit. The source pin is indicated as 'S' on the MOS FET package.

3. Gate Connection: The gate is the control terminal of the FDL100N50F MOS FET. You apply a voltage to the gate relative to the source to control the current flow between the drain and source. The gate is marked as 'G' on the MOS FET package.

4. Gate Drive Circuit: Proper gate drive is essential for fast and efficient switching of the FDL100N50F. Use a suitable gate driver circuit to provide the required gate voltage (VGS) and current to quickly charge and discharge the gate capacitance. The gate threshold voltage (VGS(TH)) of this MOS FET is specified in the data sheet.

5. Gate Protection: Place a resistor (Kg) in series with the gate to limit the inrush current and reduce ringing. Also, connect a Zenger diode between the gate and source (cathode to gate) to protect the gate from voltage spikes and transients.

6. Drain Protection: Connect a freewheeling diode (fast recovery or Scotty diode) in parallel with the load to protect the FDL100N50F from voltage spikes caused by inductive loads.

7. Thermal Management: The FDL100N50F must dissipate heat properly for reliable operation. Attach a heat sink to the MOS FET's tab or mount the device on a thermally conductive pad to ensure efficient heat removal.

8. PCB Layout Considerations: Keep the trace lengths and loop areas as small as possible to minimize parasitic inductance and capacitance. To decrease noise, decoupling capacitors should be positioned near power supply pins. Ensure proper grounding and use ground planes to improve thermal and electrical performance.

9. Protection: Consider adding overcurrent and over temperature protection circuits to protect the FDL100N50F and the overall system.

Remember that the FDL100N50F is a high-power, high-voltage device, so safety precautions should be observed when handling and operating this MOS FET. Always refer to the FDL100N50F data sheet for detailed specifications, connection diagrams, and application notes.

In conclusion, the FDL100N50F is a robust and versatile power MOS FET suitable for high-power applications. By following the connection guidelines mentioned above, you can ensure reliable and efficient operation of this device in your circuit.

FDL100N50F FAQ

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3. Are the FDL100N50F price and inventory displayed accurate?

The price and inventory of FDL100N50F fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of FDL100N50F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDL100N50F we delivered, we will accept the replacement or return of the FDL100N50F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDL100N50F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations