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Name: FDH45N50F-F133
Brand: ON Semiconductor
SKU: FDH45N50F-F133
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDH45N50F-F133

Part No.:: FDH45N50F-F133

Manufacturer:: ON Semiconductor

Package:: TO-247-3

Datasheet:: FDH45N50F-F133.pdf

Description:: MOSFET N-CH 500V 45A TO247-3

In Stock:: 2723

Quantity:: Add To Cart

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FDH45N50F-F133 Specifications

Packaging:
Bulk,Tube
Series:
UniFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
500 V
Current-ContinuousDrain(Id)@25°C:
45A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
120mOhm @ 22.5A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
137 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
6630 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
625W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

FDH45N50F-F133 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDH45N50F-F133 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDH45N50F-F133 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDH45N50F-F133 information

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FDH45N50F-F133 Typical application Circuitry

Fairchild Semiconductor offers a 500V N-Channel MOSFET called the FDH45N50F-F133. It's designed for high voltage and high-speed switching applications.

Key Parameters of FDH45N50F-F133:

- Voltage: The FDH45N50F-F133 is characterized by a high drain-to-source voltage of 500V, which makes it suitable for high voltage applications.

- Current: Due to its high current handling capacity and suitability for high power applications, this MOSFET has a drain current (Id) of 45A.

- RDS(on): The RDS(on) of FDH45N50F-F133 is 0.165 ohms. This represents the resistance between the drain and source when the transistor is switched on, with the lower value indicating efficient performance.

- Package: The FDH45N50F-F133 is offered in the TO-247 package. The efficiency with which this kind of packaging can dissipate heat is widely recognized.

FDH45N50F-F133 Applications:

The FDH45N50F-F133 is commonly used in applications such as switching power supplies, AC-DC & DC-DC converters, motor control, and other high-frequency power switching applications.

Circuit Connection Example (AC-DC Converter):

1. Gate Connection (G): The gate terminal of FDH45N50F-F133 (Pin 1) is connected to the output of the PWM controller. The PWM controller will control the MOSFET's switching activity, thus affecting the output of the AC-DC converter.

2. Drain Connection (D): The drain terminal (Pin 2) is connected to the primary side of the transformer, serving as the main switching component in the converter.

3. Source Connection (S): The source terminal (Pin 3) is grounded, creating a reference point for the drain-to-source voltage.

4. Flyback Diode: A diode is connected across the transformer to manage the current flow when the MOSFET switches off, preventing potential voltage spikes that could damage the FDH45N50F-F133.

5. Gate Protection: To prevent accidental triggering, a gate-source resistor is included to protect the gate terminal from unwanted voltage accumulation.

Design Considerations with FDH45N50F-F133:

When designing a circuit with FDH45N50F-F133, careful consideration must be given to power dissipation, operating frequencies, and load conditions. Despite the high power handling capability, the FDH45N50F-F133 will generate heat during operation, requiring effective heat management strategies such as heat sinks or cooling fans. Additionally, the choice of switching frequencies and gate drive signals should be tailored to the application's specific needs to ensure efficient operation. As with all MOSFETs, precautions must be taken against electrostatic discharge (ESD) when handling the FDH45N50F-F133.

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6. What is the process for return or replacement of FDH45N50F-F133?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDH45N50F-F133.

(3)The PartNo is unused and only in the original unpacked packaging.

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