FDH44N50 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDH44N50 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDH44N50 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Key Parameters of FDH44N50:
- Voltage: The FDH44N50 has a maximum drain-to-source voltage (Vds) of 500V. This high voltage rating makes it suitable for high voltage applications.
- Current Rating: The continuous drain current (Id) for the FDH44N50 is rated at 44A. This capacity for high current makes it suitable for high power applications.
- RDS(on): The static drain-to-source on-resistance (RDS(on)) is 0.190 ohms, which allows the device to provide efficient operation with minimal power loss during the on-state.
- Package: The FDH44N50 is available in a TO-247 package. This package is commonly used for high power devices because it allows for efficient heat dissipation.
FDH44N50 Applications:
The FDH44N50 finds extensive use in high power applications like power supplies, high-frequency inverters, and in motor control circuits where high voltage and current capacity are required.
Circuit Connection Example (Switch Mode Power Supply):
1. Gate Connection (G): The gate terminal of the FDH44N50 (Pin 1) is connected to the output of the PWM controller. This controls the on and off state of the MOSFET, effectively regulating the power supply output.
2. Drain Connection (D): The drain terminal (Pin 2) is connected to one terminal of the power supply inductor, forming the primary switch in the power supply.
3. Source Connection (S): The source terminal (Pin 3) is connected to the system ground, serving as the reference for the drain-to-source voltage.
4. Flyback Diode: A diode is placed across the inductor to provide a current path when the MOSFET is off, thus preventing voltage spikes that could damage the FDH44N50.
5. Gate Protection: A gate-source resistor is often included to prevent accidental triggering of the MOSFET due to voltage accumulation.
Design Considerations with FDH44N50:
Designing a circuit with the FDH44N50 involves careful consideration of power dissipation, switching frequencies, and load conditions. Despite its impressive power handling capabilities, the FDH44N50 does produce heat during operation. Adequate heat sinking or cooling methods should be used to ensure the device does not overheat. Furthermore, the switching frequencies and gate drive should be chosen with care to prevent unnecessary power loss and ensure efficient operation. ESD protective measures should also be taken when handling the FDH44N50, as with any MOSFET.
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The price and inventory of FDH44N50 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDH44N50 we delivered, we will accept the replacement or return of the FDH44N50 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of FDH44N50.
(3)The PartNo is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
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