What is the Additional Feature ?

Name: FDC658AP-G
Brand: ON Semiconductor
SKU: FDC658AP-G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDC658AP-G

Part No.:: FDC658AP-G

Manufacturer:: ON Semiconductor

Package:: SuperSOT™-6

Datasheet:

Description:: -30V SINGLE P-CHANNEL LOGIC LEVE

In Stock:: 3032

Quantity:: Add To Cart

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FDC658AP-G Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Last Time Buy
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
50mOhm @ 4A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
8.1 nC @ 5 V
Vgs(Max):
±25V
InputCapacitance(Ciss)(Max)@Vds:
680 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
800mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

FDC658AP-G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDC658AP-G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDC658AP-G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDC658AP-G information

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FDC658AP-G Typical application Circuitry

FDC658AP-G

The FDC658AP-G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically a P-Channel, enhancement mode MOSFET. This component is commonly used in electronic circuits for switching and amplifying electronic signals. Its usage spans across various applications due to its efficiency and reliability.

1. Primary Role of FDC658AP-G: This MOSFET, known for its P-Channel configuration, excels in roles where it acts as an electronic valve. It controls the flow of electrical currents in circuits, particularly effective in negative gate-source voltage environments.

2. Utilization in Electronics: The FDC658AP-G finds its niche in intricate power regulation systems. It's particularly adept in renewable energy setups, like solar power inverters, where efficient and reliable current modulation is paramount.

3. Distinct Features: What sets the FDC658AP-G apart are its characteristics like a low RDS(on), which means reduced energy loss during operation, and a substantial tolerance for high drain-source voltages, making it robust for fluctuating power environments.

4. Solar Inverter Circuit Application: Imagine integrating the FDC658AP-G in a solar inverter circuit. Here, pin 1 (the Drain) is connected to the inverter's output load, pin 2 (the Source) to the solar panel's output, and pin 3 (the Gate) is interfaced with a control circuit that modulates the inverter activity based on solar output. This setup is crucial for optimizing energy conversion from solar panels to usable AC power.

5. Circuit Design Insights: Designing with the FDC658AP-G in such a scenario necessitates a focus on the inverter's power capacity and the MOSFET's switching frequency, ensuring that the FDC658AP-G can handle rapid changes in solar output without efficiency loss.

6. Managing Gate-Source Voltages: It's vital to regulate the gate-source voltage within safe limits to prevent the FDC658AP-G from entering destructive operational zones, a common pitfall in solar energy applications.

7. Heat Dissipation Strategies: Given the MOSFET's role in energy-intensive environments like solar inverters, incorporating advanced heat management techniques, such as using thermal pads or heat sinks, is crucial to maintain operational integrity.

8. Incorporating Safety Features: Implementing safeguards, such as transient voltage suppressors, can protect the FDC658AP-G from sudden voltage spikes typical in solar power applications, extending its lifespan and reliability.

In conclusion, the FDC658AP-G MOSFET is a versatile component ideal for high-efficiency power regulation in renewable energy systems. Its low power loss and high voltage tolerance make it particularly suitable for solar inverter applications. Designing with this component requires careful consideration of its electrical capabilities, thermal management requirements, and the incorporation of protective measures to ensure efficient and stable operation.

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6. What is the process for return or replacement of FDC658AP-G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDC658AP-G we delivered, we will accept the replacement or return of the FDC658AP-G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDC658AP-G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations