What is the Additional Feature ?

Name: FDB035N10A
Brand: ON Semiconductor
SKU: FDB035N10A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor FDB035N10A

Part No.:: FDB035N10A

Manufacturer:: ON Semiconductor

Package:: D²PAK (TO-263)

Datasheet:: FDB035N10A.pdf

Description:: MOSFET N-CH 100V 120A D2PAK

In Stock:: 3637

Quantity:: Add To Cart

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FDB035N10A Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
PowerTrench®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
3.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
116 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
7295 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
333W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

FDB035N10A this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including FDB035N10A price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for FDB035N10A to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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FDB035N10A information

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FDB035N10A Typical application Circuitry

The FDB035N10A is not a chip, but it's a specific kind of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed by Fairchild/ON Semiconductor. This MOSFET is characterized by high power handling, low on-resistance, and efficient switching, making it suitable for a wide range of power applications.

Key Characteristics of FDB035N10A:

- Voltage Rating: The FDB035N10A has a drain-to-source voltage rating of 100V. As a result, high-voltage switching applications are appropriate for it.

- Current Rating: This MOSFET can handle a continuous drain current of 120A, implying it can handle substantial power levels.

- Power Dissipation: The FDB035N10A has a maximum power dissipation of 375W, highlighting its high power handling capability.

- On-Resistance: The device has a low on-resistance of just 3.5 milliohms. Lower on-resistance means less energy is wasted in the form of heat.

Application Scenarios:

The FDB035N10A is often utilized in power supply circuits, motor control systems, battery management systems, and in power conversion applications like DC-DC converters and inverters.

Example Circuit Connection (DC-DC Converter):

1. Gate (G): The Gate terminal (Pin 1) of the FDB035N10A connects to the PWM (Pulse Width Modulation) output of a microcontroller or any other appropriate PWM signal source.

2. Drain (D): The Drain terminal (Pin 2) connects to the load via an inductor. In a DC-DC converter, this load would usually be a filter capacitor.

3. Source (S): The system's ground is linked to the Source terminal (Pin 3). It acts as a reference for the Drain-Source voltage.

4. Drain-Source Protection: Between the Drain and Source terminals lies a freewheeling diode. This diode prevents voltage spikes caused by the inductive load when the MOSFET switches off.

5. Gate Pull-Down Resistor: The Gate and Source are coupled with a pull-down resistor. This ensures that the MOSFET remains off when the PWM signal is not actively driving the Gate.

When designing a circuit with the FDB035N10A, careful consideration should be given to the power handling and heat dissipation requirements. The device can handle significant power levels, but adequate heat sinking and cooling may be required. In addition, gate drive characteristics and switching speeds are critical factors in determining the efficiency of the circuit, particularly in high-frequency switching applications. Lastly, MOSFETs are sensitive to electrostatic discharge (ESD), so proper precautions should be taken during handling and assembly.

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6. What is the process for return or replacement of FDB035N10A?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDB035N10A we delivered, we will accept the replacement or return of the FDB035N10A only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDB035N10A.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations