DN3525N8-G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including DN3525N8-G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for DN3525N8-G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Capabilities of DN3525N8-G: The primary function of the DN3525N8-G is to switch, amplify, and regulate electronic signals, much like a typical transistor.
Use Cases of DN3525N8-G: With its features, the DN3525N8-G finds utility in various applications, such as voltage regulation, switching circuits, amplifier stages, and serving as a high-voltage, high-impedance interface for CMOS circuits.
Characteristics of DN3525N8-G: The DN3525N8-G is renowned for its high breakdown voltage of 350V, a maximum current rating of 25mA, and power dissipation of 1.56W, all while operating within a temperature range of -55 to 150 °C.
In the context of a basic high-voltage switching circuit, here's how you would interface the DN3525N8-G:
Creating Connections:
- Source Terminal (Pin 3): In most configurations, the source terminal would link directly to the ground.
- Drain Terminal (Pin 2): Acting as the output, this terminal would connect to the device intended for switching (like a light or motor) along with the high-voltage power source.
- Gate Terminal (Pin 1): As the control node, the gate terminal needs a slightly higher voltage than the source to switch the transistor off. To switch it on, you leave the gate terminal open or connect it to the ground.
While deploying the DN3525N8-G, consider the following design aspects:
1. Voltage Constraints: Ensure that the applied voltages never breach the maximum ratings. The drain-to-source voltage for the DN3525N8-G shouldn't exceed 350V, and the gate-to-source voltage must stay within -20V and +20V.
2. Power Management: Despite its 1.56W power dissipation rating, a sufficient heat sink is necessary to avert thermal issues, particularly during operation near the maximum rated current of 25mA.
3. Gate Control: As a depletion-mode FET, the DN3525N8-G needs a positive voltage at the gate to switch off. Guaranteeing this voltage requires a reliable generation method to prevent inadvertent switching.
4. Parasitic Capacitance: The inherent capacitances between the drain, source, and gate can affect performance, especially in high-frequency applications. Consider these capacitances during the design phase.
In conclusion, the DN3525N8-G is a versatile choice for high-voltage applications. Its high voltage and current ratings, combined with the ease of using a TO-220 package, ensure robust solutions to the challenging demands of contemporary electronics.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the DN3525N8-G we delivered, we will accept the replacement or return of the DN3525N8-G only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of DN3525N8-G.
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