What is the Additional Feature ?

Name: DN2540N8-G
Brand: Microchip Technology
SKU: DN2540N8-G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Microchip Technology DN2540N8-G

Part No.:: DN2540N8-G

Manufacturer:: Microchip Technology

Package:: TO-243AA (SOT-89)

Datasheet:: DN2540N8-G.pdf

Description:: MOSFET N-CH 400V 170MA TO243AA

In Stock:: 2506

Quantity:: Add To Cart

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DN2540N8-G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
400 V
Current-ContinuousDrain(Id)@25°C:
170mA (Tj)
DriveVoltage(MaxRdsOnMinRdsOn):
0V
RdsOn(Max)@IdVgs:
25Ohm @ 120mA, 0V
Vgs(th)(Max)@Id:
-
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
300 pF @ 25 V
FETFeature:
Depletion Mode
PowerDissipation(Max):
1.6W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

DN2540N8-G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including DN2540N8-G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for DN2540N8-G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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DN2540N8-G information

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DN2540N8-G Typical application Circuitry

DN2540N8-G

Dive into the world of semiconductors, and one might come across the DN2540N8-G. This component, produced by Supertex Inc., is a high-voltage depletion mode (normally on) vertical DMOS FET.

Functions of DN2540N8-G: The DN2540N8-G is fundamentally a transistor that provides switching, amplification, and regulation functions in electronic circuits.

Applications for DN2540N8-G: This component lends itself to multiple applications including voltage regulators, switching circuits, amplifiers, and as a high-voltage, high-impedance interface to CMOS circuits.

Parameters of DN2540N8-G: Some of the critical parameters for DN2540N8-G include a high breakdown voltage of 400V, a maximum current rating of 25 mA, power dissipation of 1.3 W, and a package temperature of -55 to 150 °C.

An example application for the DN2540N8-G could be in a basic high voltage switching circuit:

Circuit Connection:

- Source Terminal (Pin 3): In most applications, the source terminal is directly connected to the ground.

- Drain Terminal (Pin 2): This is the output of the transistor. For a switching application, the device that needs to be switched (such as a motor or a light) is connected in series with a high voltage power supply and the drain terminal.

- Gate Terminal (Pin 1): This is the control terminal for the transistor. To turn the transistor off, a voltage slightly higher than the source voltage needs to be applied. The gate terminal must be left open or connected to the ground in order to turn the transistor on.

Considerations for designing circuits with the DN2540N8-G:

1. Voltage Levels: Make sure that the applied voltages don't go over the maximum values that were specified. For the DN2540N8-G, the drain-to-source voltage must not exceed 400V and the gate-to-source voltage must be kept between -20V and +20V.

2. Power Dissipation: Despite the relatively high power dissipation of 1.3 W, an adequate heat sinking mechanism must be in place to prevent thermal issues, especially when operating close to the maximum rated current of 25 mA.

3. Gate Control: Since the DN2540N8-G is a depletion mode FET, it requires a positive voltage on the gate to switch off. This voltage must be generated reliably to avoid unintentional switching.

4. Parasitic Capacitance: The intrinsic capacitances between the drain, source, and gate terminals can affect the switching performance. Consider these capacitances during the design phase, especially for high-frequency applications.

The DN2540N8-G, with its high voltage rating and relatively high current capacity, is an exceptional choice for high voltage applications. These attributes, coupled with the convenience of the TO-220 package, make it a robust solution for the challenging requirements of modern electronics.

DN2540N8-G FAQ

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6. What is the process for return or replacement of DN2540N8-G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the DN2540N8-G we delivered, we will accept the replacement or return of the DN2540N8-G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of DN2540N8-G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations