What is the Additional Feature ?

Name: CSD25402Q3AT
Brand: Texas Instruments
SKU: CSD25402Q3AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD25402Q3AT

Part No.:: CSD25402Q3AT

Manufacturer:: Texas Instruments

Package:: 8-VSONP (3x3.3)

Datasheet:: CSD25402Q3AT.pdf

Description:: MOSFET P-CH 20V 15A/76A 8VSON

In Stock:: 130

Quantity:: Add To Cart

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CSD25402Q3AT Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
15A (Ta), 76A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
8.9mOhm @ 10A, 4.5V
Vgs(th)(Max)@Id:
1.15V @ 250µA
GateCharge(Qg)(Max)@Vgs:
9.7 nC @ 4.5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
1790 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
2.8W (Ta), 69W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD25402Q3AT information

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CSD25402Q3AT Typical application Circuitry

CSD25402Q3AT

The CSD25402Q3AT is a model within the NexFET™ series of power MOSFETs, known for their advanced efficiency in power management and conversion tasks. This series is engineered to cater to applications requiring low on-resistance, high power density, and fast switching performance. The CSD25402Q3AT is specifically designed for compact and high-performance applications, such as DC-DC converters, power supplies, and other space-constrained power management solutions, where its small footprint and efficient power handling are particularly beneficial.

1. Drain Pin (D): The Drain pin of the CSD25402Q3AT is typically connected to the higher voltage side of the load. When a high-side switch is configured, it is linked to the load's positive terminal. In a low-side switch configuration, it is usually connected to the circuit's ground.

2. Source Pin (S): The Source pin is another essential terminal of the MOSFET. In high-side switching, it's connected to the negative side of the load, while in low-side switching, it's typically connected to the ground or a common reference point in the circuit.

3. Gate Pin (G): The Gate pin is critical for controlling the operation of the MOSFET. It should be connected to a gate driver circuit or a microcontroller output. The voltage level at the Gate pin regulates the MOSFET's switching states.

4. Power Supply Connections: It's important to ensure that the voltage across the Drain and Source terminals does not exceed the CSD25402Q3AT's maximum rating for safe and efficient operation.

5. Gate Drive Circuitry: A proper gate drive circuit is vital for the efficient functioning of the MOSFET. This circuit should supply the required voltage and current to effectively switch the MOSFET on and off.

6. Flyback Diode for Inductive Loads: When the MOSFET is used in circuits with inductive loads, a flyback diode should be installed across the load. This diode protects the MOSFET from voltage spikes resulting from inductive kickback.

7. Thermal Management: Efficient heat dissipation, such as using heatsinks, is crucial in high-current or high-frequency switching applications to prevent overheating of the MOSFET.

8. PCB Layout Design: The PCB layout should be designed to minimize resistance and inductance in the connections between the Drain, Source, and Gate terminals. The layout should also accommodate the current handling and thermal dissipation requirements of the MOSFET.

In conclusion, the CSD25402Q3AT from the NexFET™ MOSFET series is ideal for applications that require efficient power conversion in a compact form factor. Proper implementation includes connecting the Drain, Source, and Gate terminals correctly, configuring the power supply, designing a suitable gate drive circuit, adding protection for inductive loads, ensuring effective thermal management, and creating a PCB layout that supports the MOSFET's performance and longevity in power management systems.

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