What is the Additional Feature ?

Name: CSD19537Q3T
Brand: Texas Instruments
SKU: CSD19537Q3T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD19537Q3T

Part No.:: CSD19537Q3T

Manufacturer:: Texas Instruments

Package:: 8-VSON (3.3x3.3)

Datasheet:: CSD19537Q3T.pdf

Description:: MOSFET N-CH 100V 50A 8VSON

In Stock:: 3756

Quantity:: Add To Cart

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CSD19537Q3T Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
50A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
14.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
3.6V @ 250µA
GateCharge(Qg)(Max)@Vgs:
21 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1680 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
2.8W (Ta), 83W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD19537Q3T information

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CSD19537Q3T Typical application Circuitry

CSD19537Q3T

The CSD19537Q3T is part of the NexFET™ series, a range of power MOSFETs known for their high efficiency and performance in power management and conversion applications. These MOSFETs are specifically designed to offer low on-resistance, high power density, and superior switching performance, making the CSD19537Q3T suitable for a variety of applications including DC-DC converters, power supplies, and motor drives. The CSD19537Q3T is noted for its ability to efficiently handle high currents and voltages, characterized by reduced power losses and effective thermal management, making it an essential component in high-performance power systems.

1. Drain Pin (D): The Drain pin of the CSD19537Q3T is typically connected to the higher potential side of the load. In a high-side switch configuration, it connects to the load's positive terminal, while in a low-side switch configuration, it's connected to the circuit's ground.

2. Source Pin (S): The Source pin is another major terminal of the MOSFET. In high-side switching, it's connected to the negative side of the load, and in low-side switching, it's typically tied to the circuit's ground or a common reference point.

3. Gate Pin (G): The Gate pin is crucial for controlling the MOSFET's operation. It should be connected to a gate driver circuit or a microcontroller output, where the voltage at the Gate pin regulates the on/off state of the MOSFET.

4. Power Supply Connections: It's important to ensure that the voltage across the Drain and Source terminals does not exceed the CSD19537Q3T's maximum voltage rating to maintain safe operation.

5. Gate Drive Circuitry: A suitable gate drive circuit is necessary for the efficient functioning of the MOSFET. The voltage and current needed to swiftly switch on and off the MOSFET should be supplied by this circuit.

6. Flyback Diode for Inductive Loads: When using the MOSFET with inductive loads, it's advisable to use a flyback diode across the load to protect the MOSFET from voltage spikes caused by inductive kickback.

7. Thermal Management: Proper heat dissipation methods, such as heatsinking, are important in high-current or high-frequency switching applications to prevent overheating of the MOSFET.

8. PCB Layout Design: The PCB layout should minimize resistance and inductance in the paths connecting the Drain, Source, and Gate terminals. Additionally, the design should accommodate the current handling and thermal dissipation needs of the MOSFET.

In conclusion, the CSD19537Q3T from the NexFET™ MOSFET series is ideal for high-efficiency power conversion and management applications. Effective implementation involves correct connections for the Drain, Source, and Gate terminals, suitable power supply configuration, gate driving, protection for inductive loads, efficient thermal management, and a carefully designed PCB layout to ensure optimal performance and reliability in power-intensive systems.

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