What is the Additional Feature ?

Name: CSD19537Q3
Brand: Texas Instruments
SKU: CSD19537Q3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD19537Q3

Part No.:: CSD19537Q3

Manufacturer:: Texas Instruments

Package:: 8-VSON (3.3x3.3)

Datasheet:: CSD19537Q3.pdf

Description:: MOSFET N-CH 100V 9.7A/50A 8VSON

In Stock:: 2300

Quantity:: Add To Cart

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CSD19537Q3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
50A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
14.5mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
3.6V @ 250µA
GateCharge(Qg)(Max)@Vgs:
21 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1680 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
2.8W (Ta), 83W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD19537Q3 information

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CSD19537Q3 Typical application Circuitry

CSD19537Q3

The CSD19537Q3 is a component of the NexFET™ power MOSFET series, which is highly regarded for its efficiency in power management and conversion applications. This series of MOSFETs is designed to provide low on-resistance, high power density, and exceptional switching performance. Particularly well-suited for a range of applications where effective management of large currents and voltages is essential, such as DC-DC converters, power supplies, and motor drives, is the CSD19537Q3.

1. Drain Pin (D): The Drain pin of the CSD19537Q3 is typically connected to the higher voltage side of the load. In a high-side switch configuration, it connects to the positive terminal of the load, while in a low-side switch configuration, it's connected to the circuit's ground.

2. Source Pin (S): The Source pin is another key terminal of the MOSFET. In a high-side switch, this pin connects to the negative side of the load, and in a low-side switch, it's typically connected to the ground or a common reference point in the circuit.

3. Gate Pin (G): The Gate pin is crucial for controlling the MOSFET's operation. It should be connected to a gate driver circuit or a microcontroller output, where the voltage at the Gate pin controls the on/off state of the MOSFET.

4. Power Supply Connections: It's important to ensure that the voltage across the Drain and Source terminals does not exceed the maximum voltage rating of the CSD19537Q3 to maintain safe operation.

5. Gate Drive Circuitry: A suitable gate drive circuit is necessary for the efficient functioning of the MOSFET. The necessary voltage and current should be supplied by this circuit to quickly turn on and off the MOSFET.

6. Flyback Diode for Inductive Loads: In applications involving inductive loads, a flyback diode should be placed across the load to protect the MOSFET from voltage spikes caused by inductive kickback.

7. Thermal Management: Effective heat dissipation methods, such as heatsinks, are important in high-current or high-frequency switching applications to prevent overheating of the MOSFET.

8. PCB Layout Design: The PCB layout should be designed to minimize resistance and inductance in the paths connecting the Drain, Source, and Gate terminals. Additionally, the layout should support the current handling and thermal dissipation needs of the MOSFET.

In summary, the CSD19537Q3 from the NexFET™ MOSFET series is optimized for high-efficiency power conversion and management. Proper implementation involves accurate connections for the Drain, Source, and Gate terminals, appropriate power supply configuration, gate driving, protection for inductive loads, efficient thermal management, and a carefully planned PCB layout to ensure optimal performance and reliability in power-intensive systems.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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