What is the Additional Feature ?

Name: CSD19532Q5B
Brand: Texas Instruments
SKU: CSD19532Q5B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD19532Q5B

Part No.:: CSD19532Q5B

Manufacturer:: Texas Instruments

Package:: 8-VSON-CLIP (5x6)

Datasheet:: CSD19532Q5B.pdf

Description:: MOSFET N-CH 100V 100A 8VSON

In Stock:: 2803

Quantity:: Add To Cart

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CSD19532Q5B Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
100A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
4.9mOhm @ 17A, 10V
Vgs(th)(Max)@Id:
3.2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
62 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4810 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
3.1W (Ta), 195W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD19532Q5B information

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CSD19532Q5B Typical application Circuitry

CSD19532Q5B

The CSD19532Q5B is a key component of the distinguished NexFET™ MOSFET product line, recognized for its exceptional power efficiency and robustness in power management applications. This specific device is a single N-Channel power MOSFET, notable for its high performance in reducing switching losses and enhancing power density. The CSD19532Q5B is particularly suited for a wide range of applications, including power supplies, motor drives, and other power-intensive electronic circuits, due to its capability to handle high currents with efficiency.

1. Core Characteristics of the CSD19532Q5B Series: The CSD19532Q5B is celebrated for its low on-resistance and high threshold voltage, which are critical for minimizing conduction losses and improving power efficiency in high-current applications. Its advanced design facilitates rapid switching, thereby reducing switching losses and improving performance in high-frequency power conversion systems. The device's robust thermal management capabilities ensure reliability and longevity, even under demanding operating conditions.

2. Pin Configuration and Connection Methodology: Encased in a compact SON 5x6 package, the CSD19532Q5B features a simplified pin layout that facilitates straightforward integration into circuit designs. The device consists of three main terminals: the drain (D) connected to pin 1, which is also internally connected to the thermal pad for enhanced heat dissipation; the gate (G) connected to pin 2, serving as the control terminal; and the source (S) connected across pins 3, 4, 5, and 6, ensuring a low resistance path for the current. This configuration aids in the efficient distribution of the current and aids in heat management, a crucial aspect of maintaining device performance.

3. Strategies for Embedding CSD19532Q5B in Electronic Circuits: Integrating the CSD19532Q5B into an electronic circuit necessitates careful planning, especially in the arrangement of the gate drive circuit to ensure proper switching behavior. The source terminals should be securely connected to the ground plane, and the drain terminal should be linked to the load. It is essential to provide an efficient path for heat to be conducted away from the device, typically by connecting the thermal pad to a heat sink or a well-designed PCB thermal layer.

4. Enhancing the Functionality of CSD19532Q5B: To extract maximum performance from the CSD19532Q5B, it is crucial to minimize parasitic inductances in the circuit, especially in the paths connecting the gate and the drain to their respective loads. Employing appropriate gate resistors can help in managing the switching characteristics and reducing ringing, thereby enhancing the device's efficiency and reliability. Adequate decoupling and careful layout of the power paths further contribute to the optimal performance of the CSD19532Q5B.

5. Design Considerations for Utilizing CSD19532Q5B: Effective utilization of the CSD19532Q5B in a design project requires attention to the PCB layout, ensuring minimal loop resistance and inductance in the critical paths. The positioning of the device relative to other components, especially in high-density designs, should prioritize thermal management and ease of integration into the power system. The choice of external components, such as capacitors and inductors, should complement the MOSFET's characteristics to ensure a balanced and efficient system.

6. Application Scope of the CSD19532Q5B: The versatility of the CSD19532Q5B makes it an ideal choice for a broad spectrum of power applications, from sophisticated power supply units to demanding motor control circuits. Its efficiency in handling high currents and its robust design make it a go-to solution for engineers looking to optimize their power systems for performance and reliability.

In summary, the CSD19532Q5B from the NexFET™ MOSFET series stands out as an advanced solution for managing high-efficiency power in electronic systems. Its design, characterized by low on-resistance and superior thermal performance, makes it a preferred choice for tackling challenging power management tasks. A strategic approach to incorporating the CSD19532Q5B into a design, focusing on the meticulous configuration of pins, thermal management, and circuit layout, is imperative to leverage its full potential, thus elevating the performance and dependability of the overall system.

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