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Name: CSD19502Q5B
Brand: Texas Instruments
SKU: CSD19502Q5B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD19502Q5B

Part No.:: CSD19502Q5B

Manufacturer:: Texas Instruments

Package:: 8-VSON-CLIP (5x6)

Datasheet:: CSD19502Q5B.pdf

Description:: MOSFET N-CH 80V 100A 8VSON

In Stock:: 2275

Quantity:: Add To Cart

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CSD19502Q5B Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
100A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
4.1mOhm @ 19A, 10V
Vgs(th)(Max)@Id:
3.3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
62 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4870 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
3.1W (Ta), 195W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD19502Q5B information

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CSD19502Q5B Typical application Circuitry

CSD19502Q5B

The CSD19502Q5B is a NexFET™ power MOSFET designed by Texas Instruments, primarily for high-efficiency power conversion applications. This N-channel MOSFET is ideal for a variety of power supply and switching applications because to its low on-resistance and excellent current handling capacity.

Application Scenarios: The CSD19502Q5B is commonly used in DC-DC converters, motor drives, power inverters, and other power management circuits where high efficiency and reliability are required.

Key Features:

1. Low On-Resistance (RDS(on)): Ensures high efficiency in power conversion by minimizing conduction losses.

2. High Continuous Drain Current (ID): Fit for uses where a high current-handling capacity is needed.

3. Fast Switching Speed: Provides efficient switching performance for high-frequency power conversion.

4. Robust Thermal Performance: Designed to handle high power dissipation with good thermal characteristics.

Example Circuit Design for a Motor Drive Application:

1. Power Input Connection: Connect the positive terminal of the power supply to the drain of the CSD19502Q5B MOSFET.

2. Motor Connection: Attach the motor's negative terminal to the power supply's negative terminal and its positive terminal to the MOSFET's source.

3. Gate Drive: Connect the CSD19502Q5B gate of the MOSFET to a PWM signal generated by a microcontroller or a gate driver IC to control the motor speed.

4. Freewheeling Diode: Place a freewheeling diode across the motor terminals to provide a path for the motor's inductive kickback when the MOSFET is turned off.

Design Points to Remember:

- Gate Drive Voltage: Verify that the gate drive voltage is both within the maximum gate-source voltage (VGS) rating of the MOSFET and adequate to turn it on completely.

- Switching Frequency: Choose a switching frequency that balances efficiency and electromagnetic interference (EMI) concerns.

- Thermal Management: Implement proper heat sinking and cooling measures to prevent overheating of the MOSFET during high-power operation.

- Protection Circuits: Incorporate overcurrent and overvoltage protection circuits to safeguard the MOSFET and the motor from potential damage.

Incorporating the CSD19502Q5B into a motor drive circuit requires attention to gate drive requirements, thermal management, and protection mechanisms to ensure efficient and reliable operation.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of CSD19502Q5B.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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