CSD18563Q5AT

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Texas Instruments CSD18563Q5AT

HIGH-RELIABILITY-COMPONENTS
Part No.:
CSD18563Q5AT
Manufacturer:
Texas Instruments
Package:
8-VSONP (5x6)
Datasheet:
CSD18563Q5AT.pdf
Description:
MOSFET N-CH 60V 100A 8VSON
In Stock:
1640
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    CSD18563Q5AT this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including CSD18563Q5AT price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for CSD18563Q5AT to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    CSD18563Q5AT informationCSD18563Q5AT information

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    CSD18563Q5AT Typical application Circuitry

    CSD18563Q5AT

    The CSD18563Q5AT is a high-performance N-Channel MOSFET developed by Texas Instruments, designed for applications requiring efficient power management and conversion. This device is part of TI's NexFET™ lineup, known for their low on-resistance (R_DS(on)), high efficiency, and robust thermal performance, making them suitable for a wide range of power applications.

    Application Scenarios:

    The CSD18563Q5AT is ideal for use in DC-DC converters, motor drives, power supply units, and other power management systems across automotive, industrial, and consumer electronics sectors. Its efficiency and thermal characteristics make it particularly well-suited for synchronous buck converter circuits, where minimizing power loss and managing heat are crucial.

    Characteristic Parameters:

    - Low R_DS(on): Ensures minimal conduction losses, enhancing overall system efficiency.

    - High Current Capability: Capable of handling high levels of current, making it suitable for applications with significant power requirements.

    - Fast Switching Performance: Offers fast switching speeds, reducing energy loss during switching transitions.

    - Excellent Thermal Management: Designed to operate effectively under high thermal conditions, ensuring reliability and longevity in demanding applications.

    Circuit Connection for a Synchronous Buck Converter:

    1. Input Voltage Supply: Connect the input voltage source to the drain of the high-side MOSFET (not the CSD18563Q5AT but another MOSFET appropriate for the high-side switch).

    2. Low-Side Switch Connection: The CSD18563Q5AT serves as the low-side switch. Connect its source to the circuit ground and its drain to one end of the output inductor, which is part of the LC filter network that smooths the converter's output.

    3. Gate Drive Configuration: Use a gate driver IC to control the CSD18563Q5AT's gate. This setup should ensure that the MOSFET is fully turned on and off at the appropriate times, minimizing switching losses. The gate driver should be capable of delivering sufficient drive current for rapid gate charging and discharging.

    4. Bootstrap Circuitry for High-Side MOSFET: Although not directly related to the CSD18563Q5AT, implementing a bootstrap circuit for the high-side MOSFET's gate drive is crucial in a synchronous buck converter. This involves a bootstrap diode and capacitor connected to the high-side gate driver.

    5. Output Filtering: Connect the other end of the output inductor to the positive terminal of the output capacitor, which then connects back to the circuit ground. This LC filter network helps to smooth out the ripple in the output voltage.

    Design Considerations:

    - Dead Time Optimization: Properly configure the dead time between the high-side and low-side MOSFETs to prevent simultaneous conduction, which could lead to shoot-through current and damage the CSD18563Q5AT.

    - Thermal Management: Given the power dissipation during operation, ensure adequate cooling for the CSD18563Q5AT, potentially through heat sinks or improved PCB thermal design.

    - PCB Layout: Minimize the loop area between the high-side and low-side MOSFETs, the input capacitor, and the output inductor to reduce parasitic inductances and minimize EMI.

    - Protection Features: Incorporate over-current, over-voltage, and thermal protection mechanisms to protect the CSD18563Q5AT and the entire circuit from adverse conditions.

    In deploying the CSD18563Q5AT in a synchronous buck converter, its attributes of low R_DS(on), high current handling, and efficient thermal management are leveraged to achieve efficient power conversion. Attention to detail in circuit layout, thermal management, and protective measures ensures the longevity and reliability of the application, illustrating the CSD18563Q5AT's value in high-performance power systems.

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    6. What is the process for return or replacement of CSD18563Q5AT?

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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of CSD18563Q5AT.

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    (1)Inform us within 90 days

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