What is the Additional Feature ?

Name: CSD18543Q3AT
Brand: Texas Instruments
SKU: CSD18543Q3AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD18543Q3AT

Part No.:: CSD18543Q3AT

Manufacturer:: Texas Instruments

Package:: 8-VSONP (3x3.15)

Datasheet:: CSD18543Q3AT.pdf

Description:: MOSFET N-CH 60V 12A/60A 8VSON

In Stock:: 3291

Quantity:: Add To Cart

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CSD18543Q3AT Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
12A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
15.6mOhm @ 12A, 4.5V
Vgs(th)(Max)@Id:
2.7V @ 250µA
GateCharge(Qg)(Max)@Vgs:
14.5 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1150 pF @ 30 V
FETFeature:
Standard
PowerDissipation(Max):
66W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD18543Q3AT information

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CSD18543Q3AT Typical application Circuitry

CSD18543Q3AT

The CSD18543Q3AT is a variant within the NexFET™ series of power MOSFETs, renowned for their exceptional performance in power conversion and management. This series is especially tailored for applications that require low on-resistance, high efficiency, and robust switching capabilities. The CSD18543Q3AT is particularly suited for a variety of high-demand applications, including DC-DC converters, power supplies, and motor drives, where efficient power handling and management are crucial.

1. Drain Pin (D): The Drain pin of the CSD18543Q3AT is typically connected to the high-voltage side of the load. In a high-side switching configuration, it would be linked to the positive terminal of the load, while in a low-side configuration, it would connect to the circuit's ground.

2. Source Pin (S): The Source pin is another key terminal of the MOSFET. In a high-side switch, this pin would connect to the load's negative terminal, and in a low-side switch, it would usually be connected to the circuit's ground or a common reference point.

3. Gate Pin (G): The Gate pin is critical for controlling the MOSFET's operation. This pin should be connected to a gate driver circuit or a microcontroller output. The MOSFET's switching states are controlled by the voltage that is applied to its gate pin.

4. Power Supply Connections: It's important to ensure that the voltage applied across the Drain and Source pins does not exceed the CSD18543Q3AT's maximum voltage rating, to safeguard the MOSFET's operation.

5. Gate Drive Circuitry: A properly designed gate drive circuit is necessary for the efficient operation of the MOSFET. The circuit should provide enough voltage and current to rapidly switch the MOSFET on and off.

6. Flyback Diode for Inductive Loads: When using the MOSFET with inductive loads, a flyback diode should be placed across the load. This diode protects the MOSFET from potential voltage spikes due to inductive kickback.

7. Thermal Management: Adequate heat dissipation methods, like heatsinking, are vital in high-current or high-frequency switching applications to prevent overheating of the MOSFET.

8. PCB Layout Design: The PCB layout should be designed to minimize resistance and inductance in the paths between the Drain, Source, and Gate. Additionally, the layout should accommodate the current handling and heat dissipation requirements of the MOSFET.

In conclusion, the CSD18543Q3AT from the NexFET™ MOSFET series is ideal for applications that demand efficient power conversion and control. Effective implementation includes correct connections for the Drain, Source, and Gate, appropriate power supply configuration, gate driving, protection for inductive loads, effective thermal management, and a well-thought-out PCB layout to ensure optimal performance and reliability in power management systems.

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