What is the Additional Feature ?

Name: CSD18532Q5BT
Brand: Texas Instruments
SKU: CSD18532Q5BT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD18532Q5BT

Part No.:: CSD18532Q5BT

Manufacturer:: Texas Instruments

Package:: 8-VSONP (5x6)

Datasheet:: CSD18532Q5BT.pdf

Description:: MOSFET N-CH 60V 100A 8VSON

In Stock:: 3742

Quantity:: Add To Cart

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CSD18532Q5BT Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
100A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
3.2mOhm @ 25A, 10V
Vgs(th)(Max)@Id:
2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
58 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5070 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
3.2W (Ta), 156W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

CSD18532Q5BT this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including CSD18532Q5BT price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for CSD18532Q5BT to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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CSD18532Q5BT information

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CSD18532Q5BT Typical application Circuitry

CSD18532Q5BT

The CSD18532Q5BT is a high-efficiency MOSFET from the NexFET™ series, specifically designed for power conversion applications that demand low on-resistance and high switching performance. This series is widely used in various power management solutions, such as DC-DC converters, motor drivers, and power supply units. The CSD18532Q5BT stands out for its capabilities in handling high currents and voltages efficiently, characterized by reduced power losses and improved thermal performance, making it a suitable choice for demanding power applications.

1. Drain Pin (D): The Drain pin of the CSD18532Q5BT is generally connected to the high-voltage side of the load in your circuit. For a high-side switch configuration, it connects to the positive terminal of the load, and in a low-side configuration, it's typically connected to the ground or the negative terminal.

2. Source Pin (S): The Source pin is another principal terminal of the MOSFET. In a high-side switch, it connects to the load's negative terminal, and in a low-side switch, it is usually linked to the circuit's ground or common reference.

3. Gate Pin (G): The Gate pin is vital for controlling the switching behavior of the MOSFET. This pin is connected to a gate driver or a microcontroller output, which provides the necessary voltage to turn the MOSFET on or off. The gate drive voltage should be chosen carefully to ensure proper operation within the CSD18532Q5BT's specifications.

4. Power Supply Connection: Ensure that the voltage applied across the Drain and Source terminals is within the CSD18532Q5BT's maximum voltage rating (V_DS) to prevent damage and ensure safe operation.

5. Gate Drive Circuit: A well-designed gate drive circuit is crucial for efficient MOSFET operation. The gate driver should be capable of delivering sufficient voltage and current to switch the MOSFET on and off rapidly.

6. Flyback Diode for Inductive Loads: If the CSD18532Q5BT is used in circuits with inductive loads, a flyback diode is recommended across the load. This diode protects the MOSFET from voltage spikes due to inductive kickback.

7. Thermal Management: Appropriate heat dissipation methods, such as heatsinks, are important due to the power handling nature of the CSD18532Q5BT, especially in high current or high-frequency switching applications.

8. PCB Layout Design: The PCB layout should minimize the resistance and inductance in the paths connecting the Drain, Source, and Gate terminals. The design should also accommodate the current and thermal requirements of the MOSFET for reliable operation.

In summary, the CSD18532Q5BT, part of the NexFET™ MOSFET series, is optimized for high-efficiency power conversion tasks. Implementing this component effectively involves proper connections for the Drain, Source, and Gate terminals, suitable power supply, gate drive circuitry, protection for inductive loads, and adequate thermal management. Additionally, a carefully designed PCB layout is crucial to support the MOSFET's performance and longevity in power-intensive applications.

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