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Name: CSD17308Q3T
Brand: Texas Instruments
SKU: CSD17308Q3T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD17308Q3T

Part No.:: CSD17308Q3T

Manufacturer:: Texas Instruments

Package:: 8-VSON-CLIP (3.3x3.3)

Datasheet:: CSD17308Q3T.pdf

Description:: MOSFET N-CH 30V 14A/44A 8VSON

In Stock:: 1873

Quantity:: Add To Cart

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CSD17308Q3T Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
NexFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
14A (Ta), 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
3V, 8V
RdsOn(Max)@IdVgs:
10.3mOhm @ 10A, 8V
Vgs(th)(Max)@Id:
1.8V @ 250µA
GateCharge(Qg)(Max)@Vgs:
5.1 nC @ 4.5 V
Vgs(Max):
+10V, -8V
InputCapacitance(Ciss)(Max)@Vds:
700 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
2.7W (Ta), 28W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD17308Q3T information

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CSD17308Q3T Typical application Circuitry

CSD17308Q3T

The CSD17308Q3T is a highly efficient N-channel MOSFET, renowned for its low on-resistance and swift switching capabilities. It finds extensive applications in power management, notably in DC-DC converters, motor control, and power supplies.

Functional Highlights:

- Low RDS(on): Ensures minimal power dissipation and heightened efficiency in applications.

- Rapid Switching: Facilitates high-frequency operation, critical in switch-mode power supplies and motor control.

- Substantial Current Capacity: Suitable for handling high currents, making it ideal for power-intensive applications.

Application Insights:

1. Switch-Mode Power Supplies (SMPS): Integral in the power stages for efficient voltage regulation.

2. Motor Control Circuits: Utilized in H-bridges for precise motor speed and direction control.

3. Battery Management Systems: Employed in charging and protection circuits for optimal battery performance.

Specification Overview:

- Drain-Source Breakdown Voltage (VDS): Rated up to 30V, catering to a wide range of applications.

- Continuous Drain Current (ID): Capable of supporting up to 80A, suitable for high-power scenarios.

- Thermal Considerations: Designed with effective heat dissipation in mind for reliable operation under various conditions.

Circuit Design: Battery Charger Application

Designing a battery charger circuit with the CSD17308Q3T for efficient charging:

1. Power Source Connection: Link a DC power source to the circuit, ensuring it complies with the charger's voltage requirements.

2. MOSFET Integration: Deploy the CSD17308Q3T as the primary switching element. Connect its drain (D, Pin 1) to the positive terminal of the power source, and its source (S, Pin 2) to the charging circuit's input.

3. Control Circuitry: Attach a microcontroller or PWM controller to the gate (G, Pin 3) of the MOSFET to regulate its switching, thus controlling the charging current.

4. Feedback Loop: Incorporate a voltage and current sensing mechanism to provide feedback to the control circuitry, ensuring precise charge regulation.

Design Considerations:

- Voltage Compliance: Confirm that the input voltage is within the MOSFET's maximum VDS rating to prevent breakdown.

- Current Handling: Ascertain that the MOSFET can manage the peak charging current without surpassing its ID rating.

- Switching Control: Optimize the switching frequency to balance between efficiency and component sizing, while ensuring the CSD17308Q3T MOSFET's capability to handle the switching speed.

- Thermal Management: Implement suitable cooling strategies, like heat sinks, to maintain the MOSFET's temperature within operational limits.

In conclusion, the CSD17308Q3T N-channel MOSFET is a versatile component that excels in various power management applications due to its low on-resistance, fast switching, and high current handling capabilities. When designing circuits with this MOSFET, it's crucial to consider its voltage and current ratings, switching frequency, and thermal management to ensure efficient and reliable operation.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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