What is the Additional Feature ?

Name: CSD13381F4T
Brand: Texas Instruments
SKU: CSD13381F4T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Texas Instruments CSD13381F4T

Part No.:: CSD13381F4T

Manufacturer:: Texas Instruments

Package:: 3-PICOSTAR

Datasheet:: CSD13381F4T.pdf

Description:: MOSFET N-CH 12V 2.1A 3PICOSTAR

In Stock:: 1249

Quantity:: Add To Cart

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CSD13381F4T Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
FemtoFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
12 V
Current-ContinuousDrain(Id)@25°C:
2.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
1.8V, 4.5V
RdsOn(Max)@IdVgs:
180mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id:
1.1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
1.4 nC @ 4.5 V
Vgs(Max):
8V
InputCapacitance(Ciss)(Max)@Vds:
200 pF @ 6 V
FETFeature:
-
PowerDissipation(Max):
500mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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CSD13381F4T information

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CSD13381F4T Typical application Circuitry

CSD13381F4T

A kind of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) intended for high power density and efficiency applications is the CSD13381F4T. These devices are often utilized in power management circuits due to their low on-resistance and high current handling capabilities.

Application Scenarios

The CSD13381F4T finds its application in various power management scenarios, particularly in compact and energy-efficient designs. A common application is in the power supply circuits for portable devices, where energy efficiency is crucial. For instance, it can be used in the load switch circuit to control the power supply to different parts of a device, thereby saving energy and extending battery life.

Parameter Features

Key parameter features of the CSD13381F4T include:

- Low on-resistance, which minimizes power loss.

- High current capability, suitable for handling high power loads.

- Small form factor, perfect for applications with limited space.

- Quick switching, improving power conversion applications' efficiency.

Circuit Design Considerations

When designing circuits with the CSD13381F4T, several factors need to be considered:

- Thermal Management: The CSD13381F4T can generate significant heat at high currents, necessitating effective thermal management to maintain performance and reliability.

- Gate Drive Voltage: Ensuring the gate drive voltage is correctly chosen to fully turn on the MOSFET without exceeding its maximum gate-source voltage.

- Load Characteristics: Understanding the load characteristics is crucial to ensure that the MOSFET can handle the expected currents without excessive power dissipation.

Example Circuit Connection

In a battery-powered portable device, using the CSD13381F4T to control the power supply to a sensor module can enhance energy efficiency. Here's how to connect the circuit in detail:

1. Power Source Connection: Firstly, connect the battery's positive terminal to the Drain (D) of the CSD13381F4T. The CSD13381F4T functions as a switch to regulate the battery's power flow.

2. Load Connection: Connect the sensor module's power input to the Source (S) of the CSD13381F4T. This setup allows the sensor to be powered directly via the MOSFET when it is turned on.

3. Gate Control: The Gate (G) of the CSD13381F4T is connected to a GPIO (General Purpose Input Output) pin of a microcontroller unit (MCU). Through software control, the MCU can turn the MOSFET on or off, enabling or disabling power to the sensor module.

4. Pull-down Resistor: A pull-down resistor is connected between the Gate and Source of the CSD13381F4T to ensure the MOSFET remains off when not explicitly driven by the MCU.

5. Protection Diode: If the sensor module includes inductive loads, a protection diode is placed across the load to protect the CSD13381F4T from voltage spikes caused by inductive kickback.

By carefully implementing these steps, the CSD13381F4T can efficiently control the power supply to the sensor module in a portable device, minimizing energy consumption when the sensor is not in use. The design must account for the operational parameters and environmental conditions to ensure reliability and longevity of the MOSFET in its application.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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