What is the Additional Feature ?

Name: C2M0080120D
Brand: Wolfspeed, Inc.
SKU: C2M0080120D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Wolfspeed, Inc. C2M0080120D

Part No.:: C2M0080120D

Manufacturer:: Wolfspeed, Inc.

Package:: TO-247-3

Datasheet:: C2M0080120D.pdf

Description:: SICFET N-CH 1200V 36A TO247-3

In Stock:: 809

Quantity:: Add To Cart

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C2M0080120D Specifications

Packaging:
Bulk
Series:
C2M™
ProductStatus:
Not For New Designs
FETType:
N-Channel
Technology:
SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss):
1200 V
Current-ContinuousDrain(Id)@25°C:
36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
20V
RdsOn(Max)@IdVgs:
98mOhm @ 20A, 20V
Vgs(th)(Max)@Id:
4V @ 5mA
GateCharge(Qg)(Max)@Vgs:
62 nC @ 5 V
Vgs(Max):
+25V, -10V
InputCapacitance(Ciss)(Max)@Vds:
950 pF @ 1000 V
FETFeature:
-
PowerDissipation(Max):
192W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

C2M0080120D this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including C2M0080120D price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for C2M0080120D to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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C2M0080120D information

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C2M0080120D Typical application Circuitry

The C2M0080120D is a cutting-edge component from the C2M™ (SiC MOSFET) series by Cree, Inc., designed for high-efficiency power conversion applications. This device leverages Silicon Carbide (SiC) technology to offer superior switching performance, high power efficiency, and remarkable thermal conductivity compared to traditional silicon-based MOSFETs. The C2M0080120D is particularly suited for applications such as electric vehicles, solar inverters, and high-performance power supplies where efficiency and reliability are paramount.

1. Series Innovation: The hallmark of the C2M™ series, including the C2M0080120D, lies in its utilization of SiC technology, which provides significant advantages in terms of power density, switching frequencies, and energy efficiency. These MOSFETs are engineered to handle high voltages and currents with minimal losses, making them an optimal choice for demanding power conversion tasks.

2. Terminal Configuration (Drain, Source, Gate): The C2M0080120D features a three-terminal TO-247 package, with the terminals designated as Drain (D), Source (S), and Gate (G). The Drain is connected to the high voltage side of the circuit, while the Source is connected to the low voltage side. The Gate terminal controls the MOSFET's operation, acting as the input where the driving signal is applied to switch the device on or off.

3. Cooling and Heat Management: Given the high power levels the C2M0080120D is capable of handling, effective thermal management is crucial. In order to effectively disperse the heat produced during operation, this entails mounting the device on a heat sink. Thermal interface materials, such as thermal paste or pads, are recommended to enhance the thermal connection between the MOSFET and the heat sink.

4. Gate Drive Considerations: Driving the gate of the C2M0080120D requires careful attention to ensure fast, efficient switching and to avoid damaging the device. A gate driver circuit is typically employed to provide the necessary voltage and current to the gate, ensuring that the MOSFET operates within its optimal parameters.

5. Protection Components: To safeguard the C2M0080120D against voltage spikes and surges, which can occur during switching events, additional circuit components such as gate resistors, freewheeling diodes, and snubber circuits may be incorporated. These components help to control the switching transients and protect the MOSFET from excessive stress.

6. Decoupling Capacitors: Placing decoupling capacitors near the device can help stabilize the power supply voltage by filtering out noise and transient voltage spikes. In high-speed switching applications, where power integrity is crucial, this is extremely crucial.

7. PCB Layout Considerations: The layout of the printed circuit board (PCB) hosting the C2M0080120D is vital for optimal performance. Short, wide traces for the Drain and Source connections minimize resistance and inductance, enhancing the MOSFET's efficiency and reducing electromagnetic interference (EMI).

Integrating the C2M0080120D into power conversion systems offers a pathway to achieving higher efficiency, reduced size, and improved thermal performance. Its advanced SiC technology enables designers to push the boundaries of what's possible in power electronics, leading to more efficient, reliable, and compact solutions for a wide range of high-voltage and high-power applications.

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6. What is the process for return or replacement of C2M0080120D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the C2M0080120D we delivered, we will accept the replacement or return of the C2M0080120D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of C2M0080120D.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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