BUK3F00-50WDFE,518 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BUK3F00-50WDFE,518 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BUK3F00-50WDFE,518 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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1. Series Characteristics: The distinctive feature of this series, including the BUK3F00-50WDFE,518, lies in its ability to handle significant power levels with minimal losses. This capability is crucial in applications requiring high-density power management, where efficiency and thermal performance are paramount.
2. Terminal Designation (Drain, Gate, Source): The BUK3F00-50WDFE,518 is encapsulated in a compact LFPAK56 (Power-SO8) package, featuring three primary terminals: Drain (D), Gate (G), and Source (S). The Drain terminal is designed for connection to the high voltage side of the circuit, while the Source terminal connects to the low voltage side or ground. The Gate terminal, being the control input, is where the voltage is applied to switch the MOSFET on or off.
3. Gate Drive Considerations: Properly driving the Gate of the BUK3F00-50WDFE,518 is crucial for optimal performance. A gate driver circuit is often employed to provide the correct voltage level and current required to switch the MOSFET efficiently, minimizing switching losses and ensuring rapid transition between on and off states.
4. Heat Dissipation: Due to the power handling capabilities of the BUK3F00-50WDFE,518, effective thermal management is essential. This involves mounting the MOSFET to a heat sink or using a PCB with adequate thermal vias to dissipate the heat generated during operation, ensuring the device operates within its specified temperature range.
5. Protection Features: Integrating protection features such as over-current, over-voltage, and over-temperature protection can enhance the reliability of circuits utilizing the BUK3F00-50WDFE,518. These features help prevent damage to the MOSFET and the broader system in adverse conditions.
6. Parasitic Inductance Management: Minimizing parasitic inductance in the circuit layout is crucial, especially in high-frequency applications. Short, wide traces for the Drain and Source connections, along with careful placement of bypass and decoupling capacitors, can reduce the effects of parasitic inductance, improving overall circuit performance.
The BUK3F00-50WDFE,518 stands out for its ability to deliver high efficiency and reliability in power management applications. Its advanced design and robust packaging make it a suitable choice for demanding environments, particularly in automotive and industrial applications where performance and durability are critical.
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The price and inventory of BUK3F00-50WDFE,518 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BUK3F00-50WDFE,518 we delivered, we will accept the replacement or return of the BUK3F00-50WDFE,518 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of BUK3F00-50WDFE,518.
(3)The PartNo is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
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