What is the Additional Feature ?

Name: BSS84LT1G
Brand: ON Semiconductor
SKU: BSS84LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor BSS84LT1G

Part No.:: BSS84LT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: BSS84LT1G.pdf

Description:: MOSFET P-CH 50V 130MA SOT23-3

In Stock:: 3915

Quantity:: Add To Cart

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BSS84LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
130mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
5V
RdsOn(Max)@IdVgs:
10Ohm @ 100mA, 5V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
30 pF @ 5 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS84LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS84LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS84LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS84LT1G information

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BSS84LT1G Typical application Circuitry

BSS84LT1G

The BSS84LT1G is a P-channel MOSFET designed for efficient power control and switching in electronic circuits. This type of MOSFET is particularly useful in applications where high-side switching is advantageous, such as in power management systems.

Functional Characteristics

P-Channel MOSFET: The BSS84LT1G operates as a P-channel MOSFET, ideal for high-side switching applications.

Application Scenarios

In Power Management Systems: Commonly used in the power management circuits of portable devices, like smartphones and laptops.

For Load Switching: Suitable for load-switching applications in consumer electronics, including LED control and small motor operation.

Key Parameters

Efficient Power Handling: The BSS84LT1G features low on-resistance, crucial for minimizing power loss during operation.

High-Speed Switching Capability: Designed for rapid switching, essential for dynamic power management tasks.

Circuit Example: Portable Device Power Management

Objective: Designing a power management circuit for a portable device using the BSS84LT1G.

Detailed Circuit Layout

1. Power Source Integration: Start with a DC power source, like a 3.7V Lithium-Ion battery.

2. MOSFET Deployment: Connect the source pin (Pin 1) of the BSS84LT1G to the positive terminal of the battery.

3. Load Connection: Attach the drain pin (Pin 2) to the power input of the device's circuit.

4. Control Signal Setup: Interface a control signal (from a microcontroller) to the gate pin (Pin 3) to manage the power flow to the device.

5. Circuit Protection and Grounding: Ensure proper grounding and include necessary protective elements like overcurrent protection.

Design Considerations

When designing circuits with the BSS84LT1G, consider these aspects:

1. Gate Voltage Precision: Ensure the gate voltage is suitable for the MOSFET's operation without causing stress.

2. Thermal Management: Implement heat dissipation if the MOSFET is expected to handle significant current.

3. Signal Integrity: Maintain the accuracy of the control signal for precise power management.

4. Load Compatibility: Confirm that the device's specifications match the operational capacity of the MOSFET.

5. Circuit Protection: Incorporate elements like overcurrent protection for the safety of the MOSFET and the device.

6. Parasitic Capacitance Minimization: Design the circuit layout to reduce parasitic effects, crucial for high-speed performance.

7. Stable Power Source Use: Utilize a regulated power source to prevent voltage fluctuations impacting the MOSFET's functionality.

8. Environmental Condition Adaptation: Consider operating conditions such as temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS84LT1G P-channel MOSFET is an efficient component, particularly effective for applications in power management systems of portable devices. Its low on-resistance and high-speed switching capabilities make it a valuable choice for modern electronic designs. Key aspects of circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS84LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS84LT1G we delivered, we will accept the replacement or return of the BSS84LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS84LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations