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Infineon Technologies BSS308PEH6327XTSA1

Part No.:: BSS308PEH6327XTSA1

Manufacturer:: Infineon Technologies

Package:: PG-SOT23

Datasheet:: BSS308PEH6327XTSA1.pdf

Description:: MOSFET P-CH 30V 2A SOT23-3

In Stock:: 3206

Quantity:: Add To Cart

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BSS308PEH6327XTSA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
80mOhm @ 2A, 10V
Vgs(th)(Max)@Id:
2V @ 11µA
GateCharge(Qg)(Max)@Vgs:
5 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
500 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
500mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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BSS308PEH6327XTSA1 information

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BSS308PEH6327XTSA1 Typical application Circuitry

BSS308PEH6327XTSA1

The BSS308PEH6327XTSA1 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for efficient power management and control in electronic circuits. The "PEH6327XTSA1" designation indicates a specific model within the BSS308 series, possibly referring to its packaging or particular electrical characteristics. P-channel MOSFETs like the BSS308PEH6327XTSA1 are typically used for their ability to efficiently switch and manage power in a high-side configuration.

Functional Role

P-Channel MOSFET: The BSS308PEH6327XTSA1 functions as a P-channel MOSFET, ideal for high-side switching applications where efficient control of electrical current is needed.

Application Scenarios

In Power Distribution Systems: Commonly used in power distribution systems of portable devices for efficient power management.

For Load Switching Applications: Suitable for load-switching applications in consumer electronics, such as controlling LEDs or small motors.

Key Parameters

Effective Power Handling: The BSS308PEH6327XTSA1 features low on-resistance, ensuring efficient power handling and minimal energy loss.

High-Speed Switching Performance: Designed for quick switching, making it appropriate for dynamic power management tasks.

Circuit Example: High-Side Load Switching

Objective: Designing a high-side load-switching circuit using the BSS308PEH6327XTSA1.

Detailed Circuit Implementation

1. Power Source Setup: Begin with a suitable DC power source, like a 5V battery, appropriate for the circuit's requirements.

2. MOSFET Deployment: Connect the source pin (Pin 1) of the BSS308PEH6327XTSA1 to the positive terminal of the power source.

3. Load Configuration: Attach the drain pin (Pin 2) to the load, such as an LED or a small motor.

4. Control Signal Connection: Interface a control signal (from a microcontroller) to the gate pin (Pin 3) to manage the load's power.

5. Grounding and Protection Measures: Ensure the load's other terminal is connected to the ground and include necessary protection, like a current-limiting resistor.

Design Considerations

When incorporating the BSS308PEH6327XTSA1, focus on these factors:

1. Gate Voltage Optimization: The gate voltage should be suitable for the MOSFET's operation without causing stress.

2. Thermal Management: Implement heat dissipation strategies, especially if the MOSFET handles substantial current.

3. Signal Clarity: Maintain the precision of the control signal for accurate operation of the load switching.

4. Voltage Rating Compatibility: Confirm that the MOSFET's voltage ratings align with the power source and the load.

5. Circuit Protection: Incorporate elements like overcurrent protection for the safety of the MOSFET and connected components.

6. Parasitic Capacitance Control: Design the layout to minimize parasitic effects, crucial for maintaining high-speed performance.

7. Stable Power Supply Use: Utilize a regulated power source to prevent voltage fluctuations impacting the MOSFET's functionality.

8. Environmental Condition Adaptation: Consider operating conditions such as temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS308PEH6327XTSA1 P-channel MOSFET is an efficient component, particularly effective for high-side load-switching applications in power management systems. Its low on-resistance and quick switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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