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Infineon Technologies BSS169H6327XTSA1

Part No.:: BSS169H6327XTSA1

Manufacturer:: Infineon Technologies

Package:: PG-SOT23

Datasheet:: BSS169H6327XTSA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

In Stock:: 92729

Quantity:: Add To Cart

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BSS169H6327XTSA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
SIPMOS®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
0V, 10V
RdsOn(Max)@IdVgs:
6Ohm @ 170mA, 10V
Vgs(th)(Max)@Id:
1.8V @ 50µA
GateCharge(Qg)(Max)@Vgs:
2.8 nC @ 7 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
68 pF @ 25 V
FETFeature:
Depletion Mode
PowerDissipation(Max):
360mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS169H6327XTSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS169H6327XTSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS169H6327XTSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS169H6327XTSA1 information

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BSS169H6327XTSA1 Typical application Circuitry

BSS169H6327XTSA1

The BSS169H6327XTSA1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically designed for efficient switching in a wide range of electronic circuits. The "H6327XTSA1" in its name suggests specific packaging or electrical characteristics within the BSS169 series, tailored for certain performance requirements. N-channel MOSFETs like the BSS169H6327XTSA1 are popular for their ability to efficiently control electrical currents, making them versatile for various applications.

Functional Role

N-Channel MOSFET: The BSS169H6327XTSA1 functions as an N-channel MOSFET, ideal for applications that demand rapid switching and effective signal processing.

Application Scenarios

In Digital Logic Control: Commonly used for controlling logic levels and switching operations in digital electronics.

For Driving Small Loads: Suitable for circuits that drive small loads like LEDs or relays, where precision is key.

Key Parameters

Efficient Current Handling: The BSS169H6327XTSA1 features low on-resistance, ensuring minimal power loss and efficient current management.

High-Speed Switching: Designed for high-speed switching, making it suitable for dynamic electronic applications.

Circuit Example: Digital Logic Interface

Objective: Creating a digital logic interface circuit using the BSS169H6327XTSA1.

Detailed Circuit Design

1. Power Source Connection: Start with a DC power source compatible with the digital logic system, such as a 5V supply.

2. MOSFET Integration: Connect the drain pin (Pin 1) of the BSS169H6327XTSA1 to the digital input/output of the circuit.

3. Control Signal Setup: Attach a digital control signal (from a microcontroller) to the gate pin (Pin 2) to regulate the logic operation.

4. Source Pin Grounding: Link the source pin (Pin 3) to the circuit's common ground, completing the electrical path.

5. Output Configuration: Interface the drain pin with the target digital component (e.g., an LED or sensor), ensuring efficient signal transmission.

Design Considerations

When designing circuits with the BSS169H6327XTSA1, consider these factors:

1. Appropriate Gate Voltage: Ensure the gate voltage is correct for effective MOSFET operation without causing damage.

2. Thermal Management: Implement heat dissipation if the MOSFET is expected to handle high currents.

3. Signal Integrity: Maintain signal integrity, crucial in digital logic applications for accurate operation.

4. Load Compatibility: Confirm that the load's electrical characteristics match the MOSFET's operational capacity.

5. Circuit Protection: Incorporate elements like overcurrent protection for the safety of the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the layout to reduce parasitic capacitance and inductance, key for maintaining high-speed performance.

7. Stable Power Source: Utilize a regulated power source to prevent voltage fluctuations that could impact MOSFET performance.

8. Environmental Adaptation: Factor in operating conditions like temperature and humidity, which might affect the MOSFET's efficiency.

In summary, the BSS169H6327XTSA1 N-channel MOSFET is an efficient component, particularly effective for applications like digital logic control and driving small loads. Its low on-resistance and fast-switching capabilities make it a valuable choice for contemporary electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS169H6327XTSA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS169H6327XTSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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