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Diodes Incorporated BSS138W-7-F-79

Part No.:: BSS138W-7-F-79

Manufacturer:: Diodes Incorporated

Package:: SOT-323

Datasheet:

Description:: DIODE

In Stock:: 3044

Quantity:: Add To Cart

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BSS138W-7-F-79 Specifications

Packaging:
Bulk
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
200mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138W-7-F-79 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138W-7-F-79 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138W-7-F-79 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138W-7-F-79 information

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BSS138W-7-F-79 Typical application Circuitry

N-channel MOSFETs (Metal Oxide-Semiconductor Field-Effect Transistors) are specialized for high-speed switching and signal amplification in electronic circuits. The BSS138W-7-F-79 is one such MOSFET. The "W-7-F-79" likely indicates a specific variant within the BSS138 series, with the "F" denoting compliance with RoHS standards (Lead-Free). N-channel MOSFETs like the BSS138W-7-F-79 are popular for their efficiency in controlling electrical current, making them suitable for a range of applications.

Functional Characteristics

N-Channel MOSFET Role: The BSS138W-7-F-79 operates as an N-channel MOSFET, ideal for applications requiring quick switching and effective signal handling.

Application Scenarios

In Digital Logic Circuits: Often used for controlling logic levels and switching operations in digital electronics.

For Driving Small Loads: Employed in circuits driving small loads, like LEDs, where efficient current control is crucial.

Key Parameters

Efficient Current Handling: The BSS138W-7-F-79 features low on-resistance, ensuring efficient current handling with minimal power loss.

Rapid Switching Ability: Its design enables high-speed switching, crucial for dynamic electronic applications.

Circuit Example: LED Driver Circuit

Design Objective: Constructing an LED driver circuit using the BSS138W-7-F-79.

Detailed Circuit Layout

1. Stable Power Source: Start with a suitable power source, like a 5V DC supply, compatible with the LED's requirements.

2. MOSFET Integration: Connect the drain pin (Pin 1) of the BSS138W-7-F-79 to the anode of the LED.

3. Control Signal Application: Attach a control signal, such as a PWM output from a microcontroller, to the gate pin (Pin 2) to adjust the LED's brightness.

4. Source Pin Grounding: Link the source pin (Pin 3) to the common ground of the circuit, completing the electrical path.

5. Load and Protection Setup: Connect the cathode of the LED to the ground and include a current-limiting resistor to prevent overcurrent damage to the LED.

Design Considerations

When designing circuits with the BSS138W-7-F-79, consider these factors:

1. Optimal Gate Voltage: Ensure the gate voltage is appropriate to fully activate the MOSFET without causing damage.

2. Thermal Management: Implement heat dissipation measures if the MOSFET is expected to handle high currents.

3. Signal Integrity: In PWM applications, maintaining the integrity of the control signal is vital for accurate LED brightness control.

4. Load Compatibility: Verify that the LED's electrical characteristics match the MOSFET's operational capacity.

5. Circuit Protection: Include circuit protection, such as overcurrent protection, to enhance the safety and longevity of both the MOSFET and the LED.

6. Parasitic Capacitance Control: Design the layout to minimize parasitic effects, especially important in high-speed applications.

7. Stable Power Supply: Use a regulated power source to prevent voltage fluctuations that could impact MOSFET performance.

8. Environmental Factors: Consider the operating environment, as temperature and humidity can affect MOSFET efficiency.

In summary, the BSS138W-7-F-79 N-channel MOSFET is an efficient component, particularly suitable for applications like LED driving in electronic circuits. Its low on-resistance and high-speed switching capabilities make it a valuable choice for modern electronic designs. Key considerations in circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures to ensure effective and reliable performance.

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6. What is the process for return or replacement of BSS138W-7-F-79?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138W-7-F-79.

(3)The PartNo is unused and only in the original unpacked packaging.

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