BSS138TA-79

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Diodes Incorporated BSS138TA-79

HIGH-RELIABILITY-COMPONENTS
Part No.:
BSS138TA-79
Manufacturer:
Diodes Incorporated
Package:
-
Datasheet:
Description:
MOSFET N-CH SOT23
In Stock:
2788
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    BSS138TA-79 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138TA-79 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138TA-79 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    BSS138TA-79 informationBSS138TA-79 information

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    BSS138TA-79 Typical application Circuitry


    A metal-oxide-semiconductor field-effect transistor (MOSFET) with an N-channel design, the BSS138TA-79 is intended for use in electrical circuits for high-speed switching applications. The "TA-79" part of its name likely specifies a particular variant or version within the BSS138 series, indicating specific packaging, electrical characteristics, or performance criteria. N-channel MOSFETs like the BSS138TA-79 are known for their efficiency in controlling electrical current, making them suitable for a variety of applications.

    Functional Description

    Role as N-Channel MOSFET: The BSS138TA-79 functions as an N-channel MOSFET, optimized for applications that demand quick switching and efficient signal processing.

    Application Scenarios

    In Logic Level Shifting: Frequently used in circuits requiring logic level shifting between different voltage domains, such as interfacing 3.3V and 5V logic.

    For Driving Small Loads: Commonly employed in circuits to drive small loads like LEDs, where precise control is needed.

    Key Parameters

    Efficient Electrical Conductance: The BSS138TA-79's low on-resistance allows for efficient power handling, minimizing losses.

    High-Speed Switching Capability: Designed for rapid switching, making it suitable for dynamic electronic applications.

    Circuit Example: Logic Level Shifter

    Design Objective: Creating a logic level shifter using the BSS138TA-79 for interfacing a 3.3V microcontroller with a 5V digital system.

    Detailed Circuit Layout

    1. Power Source Integration: Start with two power sources – a 3.3V source for the microcontroller and a 5V source for the digital system.

    2. MOSFET Placement: Connect the drain pin (Pin 1) of the BSS138TA-79 to the 5V logic level.

    3. Control Signal Application: Attach the 3.3V logic signal from the microcontroller to the gate pin (Pin 2). This signal controls the level shifting.

    4. Source Pin Grounding: Link the source pin (Pin 3) to the 3.3V ground, establishing the lower voltage reference.

    5. Output Configuration: Interface the drain pin with the 5V digital system's input, converting the 3.3V signal to a 5V logic level.

    Design Considerations

    When designing circuits with the BSS138TA-79, consider these aspects:

    1. Appropriate Gate Voltage: Ensure the gate voltage is suitable for the MOSFET's effective operation without overloading.

    2. Thermal Management: Implement heat dissipation if the MOSFET is expected to handle high currents.

    3. Signal Integrity: Maintain the clarity of the control signal for accurate logic level conversion.

    4. Voltage Rating Compatibility: Confirm that the MOSFET's voltage ratings align with both the 3.3V and 5V systems.

    5. Circuit Protection: Incorporate protective elements like overcurrent protection to enhance the safety of the MOSFET and connected components.

    6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for high-speed switching performance.

    7. Stable Power Supply: Use regulated power sources to prevent voltage fluctuations that could impact the MOSFET's functionality.

    8. Environmental Adaptability: Consider operating conditions such as temperature and humidity, which might affect the MOSFET's efficiency.

    In summary, the BSS138TA-79 N-channel MOSFET is an efficient component, particularly effective for applications like logic level shifting in mixed-voltage digital systems. Its low on-resistance and rapid switching capabilities make it a valuable choice in modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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    6. What is the process for return or replacement of BSS138TA-79?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS138TA-79 we delivered, we will accept the replacement or return of the BSS138TA-79 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of BSS138TA-79.

    (3)The PartNo is unused and only in the original unpacked packaging.

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    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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