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Nexperia USA Inc. BSS138PW,115

Part No.:: BSS138PW,115

Manufacturer:: Nexperia USA Inc.

Package:: SOT-323

Datasheet:: BSS138PW,115.pdf

Description:: MOSFET N-CH 60V 320MA SOT323

In Stock:: 2178

Quantity:: Add To Cart

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BSS138PW,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
320mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
1.6Ohm @ 300mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
260mW (Ta), 830mW (Tc)
OperatingTemperature:
-55°C ~ 150°C (TA)
MountingType:
Surface Mount

BSS138PW,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138PW,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138PW,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138PW,115 information

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BSS138PW,115 Typical application Circuitry

BSS138PW,115

The BSS138PW,115 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), tailored for high-speed switching applications in electronic circuits. The "PW,115" designation indicates a specific packaging or version within the BSS138 series, which is particularly designed for certain performance requirements or applications. N-channel MOSFETs like the BSS138PW,115 are renowned for their efficiency in controlling electrical currents and are widely used in various applications.

Functional Role

N-Channel MOSFET: The BSS138PW,115 operates as an N-channel MOSFET, ideal for scenarios requiring rapid switching and efficient signal handling.

Application Scenarios

In Digital Logic Interfaces: Frequently utilized for controlling logic levels and switching operations in digital electronics.

For Charge Pump Circuits: Commonly employed in charge pump circuits for voltage regulation and conversion.

Key Parameters

Efficient Power Management: The BSS138PW,115 features low on-resistance, crucial for efficient power handling and minimizing losses.

High-Speed Switching: Designed for high-speed switching, suitable for dynamic electronic applications.

Circuit Example: Voltage Regulation in a Charge Pump

Objective: Designing a voltage regulation circuit in a charge pump using the BSS138PW,115.

Detailed Circuit Design

1. Power Source Integration: Start with a DC power source suitable for the charge pump's operational voltage, like a 5V supply.

2. MOSFET Deployment: Connect the drain pin (Pin 1) of the BSS138PW,115 to the charge pump circuit.

3. Control Signal Connection: Attach a control signal from a voltage regulation IC to the gate pin (Pin 2). This signal will regulate the MOSFET for voltage conversion.

4. Source Pin Grounding: Link the source pin (Pin 3) of the MOSFET to the circuit's ground, completing the current path.

5. Output Configuration: Interface the output of the charge pump with the regulated voltage to the intended load or circuit component.

Design Considerations

When incorporating the BSS138PW,115, focus on these factors:

1. Gate Voltage Suitability: Ensure the gate voltage is appropriate for the MOSFET's effective operation without causing damage.

2. Thermal Management: Implement heat dissipation measures if the MOSFET is expected to handle high currents.

3. Signal Clarity: Maintain the integrity of the control signal, crucial in voltage regulation applications for accurate operation.

4. Load Compatibility: Confirm that the load's specifications align with the MOSFET's operational capabilities.

5. Circuit Protection: Incorporate protective elements like overcurrent protection to safeguard the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, key for maintaining high-speed performance.

7. Stable Power Supply: Use a regulated power source to prevent fluctuations impacting the MOSFET's functionality.

8. Environmental Adaptability: Consider operating conditions like temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138PW,115 N-channel MOSFET is an efficient component, particularly effective for applications like voltage regulation in charge pump circuits. Its low on-resistance and rapid switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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