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Infineon Technologies BSS138NH6327XTSA2

Part No.:: BSS138NH6327XTSA2

Manufacturer:: Infineon Technologies

Package:: PG-SOT23

Datasheet:: BSS138NH6327XTSA2.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

In Stock:: 3863

Quantity:: Add To Cart

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BSS138NH6327XTSA2 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
SIPMOS®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
230mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
3.5Ohm @ 230mA, 10V
Vgs(th)(Max)@Id:
1.4V @ 26µA
GateCharge(Qg)(Max)@Vgs:
1.4 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
41 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
360mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138NH6327XTSA2 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138NH6327XTSA2 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138NH6327XTSA2 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138NH6327XTSA2 information

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BSS138NH6327XTSA2 Typical application Circuitry

BSS138NH6327XTSA2

The BSS138NH6327XTSA2 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for high-speed switching applications in electronic circuits. The extended name, including "NH6327XTSA2", likely indicates specific packaging, electrical characteristics, or a variant within the broader BSS138 series. N-channel MOSFETs like this are renowned for their efficiency in controlling electrical current, making them suitable for a variety of applications.

Functional Characteristics

N-Channel MOSFET Role: The BSS138NH6327XTSA2 functions as an N-channel MOSFET, ideal for scenarios that require rapid switching and efficient signal handling.

Application Scenarios

In Logic Level Shifting: Commonly used in circuits that need to shift logic levels between different voltage domains, such as interfacing 3.3V and 5V logic components.

For Driving Small Loads: Suitable for circuits driving small loads like LEDs, where precise control is essential.

Key Parameters

Efficient Power Handling: The BSS138NH6327XTSA2 features low on-resistance, ensuring efficient power handling and minimal losses.

High-Speed Switching Capability: Its design enables rapid switching, suitable for dynamic electronic applications.

Circuit Example: Load Switching in Power Management

Design Objective: Creating a load-switching circuit for power management using the BSS138NH6327XTSA2.

Detailed Circuit Implementation

1. Power Source Setup: Start with a DC power source appropriate for the operational voltage of the load, such as a 5V supply for an LED.

2. MOSFET Integration: Connect the drain pin (Pin 1) of the BSS138NH6327XTSA2 to the load (e.g., the anode of an LED).

3. Control Signal Connection: Attach a control signal, like a PWM output from a microcontroller, to the gate pin (Pin 2) for regulating the load.

4. Source Pin Grounding: Link the source pin (Pin 3) to the circuit's common ground, completing the electrical path.

5. Load and Protective Configuration: Interface the cathode of the LED with the ground and include a current-limiting resistor for overcurrent protection.

Design Considerations

When designing circuits with the BSS138NH6327XTSA2, focus on these factors:

1. Gate Voltage Optimization: Ensure the gate voltage is suitable for activating the MOSFET without causing damage.

2. Thermal Management: Implement heat dissipation strategies, especially if the MOSFET is expected to handle high currents.

3. Signal Integrity Maintenance: In PWM applications, maintaining signal accuracy is crucial for precise load control.

4. Load Compatibility Check: Confirm that the load's electrical characteristics align with the MOSFET's operational capacity.

5. Circuit Protection: Incorporate protective elements like overcurrent protection for the safety of both the MOSFET and the load.

6. Minimizing Parasitic Effects: Design the layout to reduce parasitic capacitance and inductance, key for maintaining high-speed performance.

7. Stable Power Source: Utilize a regulated power supply to prevent voltage fluctuations that could impact the MOSFET's function.

8. Environmental Condition Adaptation: Factor in operating conditions such as temperature and humidity, which might affect the MOSFET's efficiency.

In summary, the BSS138NH6327XTSA2 N-channel MOSFET is a versatile and efficient component, especially effective for applications like load switching in power management systems. Its low on-resistance and rapid switching capabilities make it a valuable choice for contemporary electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal clarity, and protective measures, ensuring optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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