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ON Semiconductor BSS138LT7G

Part No.:: BSS138LT7G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:

Description:: MOSFET N-CH 50V 200MA SOT23-3

In Stock:: 3907

Quantity:: Add To Cart

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BSS138LT7G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.75V, 5V
RdsOn(Max)@IdVgs:
3.5Ohm @ 200mA, 5V
Vgs(th)(Max)@Id:
1.5V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138LT7G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138LT7G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138LT7G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138LT7G information

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BSS138LT7G Typical application Circuitry

The BSS138LT7G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically designed for high-speed switching and signal amplification in a variety of electronic applications. The "LT7G" in its designation likely refers to a specific version or packaging within the BSS138 series. N-channel MOSFETs like the BSS138LT7G are widely used for their efficiency in controlling electrical current, suitable for diverse applications.

Functional Characteristics

N-Channel MOSFET Role: The BSS138LT7G functions as an N-channel MOSFET, optimized for applications that require quick switching and efficient signal processing.

Application Scenarios

In Logic Level Conversion: Commonly used in circuits that need to shift logic levels between different voltage domains, such as interfacing between 3.3V and 5V logic.

For Driving Small Loads: Employed in circuits for driving small loads like LEDs or relays, where precise control is required.

Key Parameters

Efficient Current Handling: The BSS138LT7G features low on-resistance, ensuring efficient current handling with minimal power loss.

High-Speed Switching: Its design enables high-speed switching, crucial for dynamic electronic applications.

Circuit Example: Logic Level Shifter

Objective: Constructing a logic level shifter using the BSS138LT7G for interfacing a 3.3V microcontroller with a 5V system.

Detailed Circuit Layout

1. Power Sources Integration: Begin with a 3.3V power source for the microcontroller and a 5V source for the higher logic level system.

2. MOSFET Placement: Connect the drain pin (Pin 1) of the BSS138LT7G to the 5V system.

3. Control Signal Application: Attach the 3.3V logic signal from the microcontroller to the gate pin (Pin 2). This signal will control the level shifting process.

4. Source Pin Grounding: Link the source pin (Pin 3) to the 3.3V ground, establishing the lower voltage reference.

5. Output Configuration: Interface the drain pin with the 5V system input, achieving the conversion from 3.3V to 5V logic levels.

Design Considerations

When designing circuits with the BSS138LT7G, consider these factors:

1. Appropriate Gate Voltage: Ensure the gate voltage is correct for the MOSFET's effective operation without overloading.

2. Heat Dissipation: Implement heat management strategies if the MOSFET is expected to handle high currents.

3. Signal Integrity: Maintain the clarity of the control signal for accurate logic level conversion.

4. Voltage Compatibility: Confirm that the MOSFET's voltage ratings are suitable for both the 3.3V and 5V systems.

5. Circuit Protection: Incorporate protective elements like overcurrent protection to enhance the safety of the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Sources: Use regulated power sources to prevent fluctuations that could impact the MOSFET's functionality.

8. Environmental Adaptability: Consider operating conditions such as temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138LT7G N-channel MOSFET is an efficient component, particularly effective for applications like logic level shifting in mixed-voltage systems. Its low on-resistance and fast-switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS138LT7G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS138LT7G we delivered, we will accept the replacement or return of the BSS138LT7G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138LT7G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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