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ON Semiconductor BSS138LT1G

Part No.:: BSS138LT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: BSS138LT1G.pdf

Description:: MOSFET N-CH 50V 200MA SOT23-3

In Stock:: 2984

Quantity:: Add To Cart

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BSS138LT1G Specifications

Packaging:
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
5V
RdsOn(Max)@IdVgs:
3.5Ohm @ 200mA, 5V
Vgs(th)(Max)@Id:
1.5V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138LT1G information

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BSS138LT1G Typical application Circuitry

BSS138LT1G

The BSS138LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically engineered for high-speed switching applications in various electronic circuits. The "LT1G" in its designation indicates a variant within the BSS138 series, likely referring to its packaging or specific electrical characteristics. Such N-channel MOSFETs are celebrated for their efficiency in controlling electrical current, making them ideal for numerous applications.

Functional Role

N-Channel MOSFET: The BSS138LT1G operates as an N-channel MOSFET, ideally suited for scenarios demanding rapid switching and efficient signal handling.

Application Scenarios

In Logic Level Shifting: Commonly utilized for shifting logic levels between different voltage domains in mixed-voltage digital systems.

For Charge Pump Circuits: Employed in charge pump circuits for efficient voltage regulation and conversion.

Key Parameters

Efficient Power Management: The BSS138LT1G boasts low on-resistance, crucial for efficient power handling and minimizing losses.

High-Speed Switching Proficiency: Designed for fast switching, making it appropriate for dynamic electronic applications.

Circuit Example: Logic Level Converter

Design Objective: Constructing a logic level converter circuit using the BSS138LT1G for interfacing between a 3.3V microcontroller and a 5V sensor.

Detailed Circuit Design

1. Dual Voltage Source Connection: Initiate with two power sources – 3.3V for the microcontroller and 5V for the sensor.

2. MOSFET Deployment: Connect the drain pin (Pin 1) of the BSS138LT1G to the 5V sensor input.

3. Control Signal Linkage: Attach the 3.3V logic output from the microcontroller to the gate pin (Pin 2). This signal will govern the level conversion.

4. Source Pin Grounding: Connect the source pin (Pin 3) to the 3.3V ground to establish a reference for the lower voltage level.

5. Final Output Setup: Interface the drain pin with the 5V sensor, effectively shifting the 3.3V signal to a 5V logic level.

Design Considerations

When integrating the BSS138LT1G, consider these aspects:

1. Gate Voltage Appropriateness: Ensure the gate voltage is suitable for activating the MOSFET without causing damage.

2. Thermal Management: Consider heat dissipation strategies, particularly if the MOSFET handles high currents.

3. Signal Clarity: Maintain signal integrity, crucial in logic level conversion applications for accurate operation.

4. Load Voltage Compatibility: Ensure the MOSFET's voltage ratings match the 3.3V and 5V systems.

5. Circuit Protection Measures: Incorporate elements like overcurrent protection to enhance the MOSFET's and connected components' safety.

6. Parasitic Capacitance Reduction: Design the circuit to minimize parasitic effects, vital for maintaining high-speed switching performance.

7. Stable Power Supply Utilization: Use regulated power sources to prevent voltage fluctuations impacting the MOSFET's functionality.

8. Environmental Factors Consideration: Account for conditions like temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138LT1G N-channel MOSFET is an efficient component, particularly effective for applications like logic level conversion in mixed-voltage systems. Its low on-resistance and fast-switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures to ensure optimal performance and reliability.

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6. What is the process for return or replacement of BSS138LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS138LT1G we delivered, we will accept the replacement or return of the BSS138LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations